Add to ORKGThe work was partially supported financially by Program 211 of the Government of the Russian Federation (№ 02.A03.21.0006)
International audienceThe cubic phase of HfO2 was stabilized by addition of yttrium in thin films gr...
International audienceIn the frame of the nanoarchitectonic concept, the objective of this study was...
HfO2 thin films were prepared by plasma-enhanced atomic layer deposition using a cyclopentadienyl-al...
Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical b...
The physicochemical and electrical properties of atomic-layer-deposited HfO2 films grown using O-3 g...
The HfO2 thin-film is a very promising gate dielectric material for last generation transistors. The...
HfO2 films were deposited by atomic layer deposition (ALD) using Hf[(C2H5)(CH3)N](4) and H2O2 at a t...
[[abstract]]The growth, composition, electrical characteristics, and reliability performance of high...
Solid solutions of ZrO2 and HfO2 are potential electrolyte materials for intermediate-temperature SO...
[[abstract]]A low-temperature method, supercritical CO2 fluid (SCF) technology, is proposed to impro...
Thin films of HfO2 were grown by metal-organic chemical vapour deposition on fused quartz substrates...
The properties of atomic layer deposited (ALD) HfO2 films grown at low temperatures (<= 100 degrees ...
Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor d...
International audienceThe cubic phase of HfO2 was stabilized by addition of yttrium in thin films gr...
International audienceIn the frame of the nanoarchitectonic concept, the objective of this study was...
HfO2 thin films were prepared by plasma-enhanced atomic layer deposition using a cyclopentadienyl-al...
Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical b...
The physicochemical and electrical properties of atomic-layer-deposited HfO2 films grown using O-3 g...
The HfO2 thin-film is a very promising gate dielectric material for last generation transistors. The...
HfO2 films were deposited by atomic layer deposition (ALD) using Hf[(C2H5)(CH3)N](4) and H2O2 at a t...
[[abstract]]The growth, composition, electrical characteristics, and reliability performance of high...
Solid solutions of ZrO2 and HfO2 are potential electrolyte materials for intermediate-temperature SO...
[[abstract]]A low-temperature method, supercritical CO2 fluid (SCF) technology, is proposed to impro...
Thin films of HfO2 were grown by metal-organic chemical vapour deposition on fused quartz substrates...
The properties of atomic layer deposited (ALD) HfO2 films grown at low temperatures (<= 100 degrees ...
Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor d...
International audienceThe cubic phase of HfO2 was stabilized by addition of yttrium in thin films gr...
International audienceIn the frame of the nanoarchitectonic concept, the objective of this study was...
HfO2 thin films were prepared by plasma-enhanced atomic layer deposition using a cyclopentadienyl-al...