This animation is provided by Maricopa Advanced Technology Education Center (MATEC) and shows the plasma etching of silicon dioxide. In this type of plasma etching process, a chlorine gas and argon gas mixture is used. The chlorine gas neutral charge molecules bond with the surface silicon dioxide molecules and create silicon chloride molecule. Through the bombardment of the plasma charged Argon molecules the silicon chloride molecules are released from the surface layer. The etch continues till the exposed silicon dioxide material is removed. An .mp4 is also available and runs 00:32 seconds in length.Â
Plasma etching is an essential process in the fabrication of subm cron features in the semiconductor...
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This animation, provided by Maricopa Advanced Technology Education Center (MATEC), illustrates how a...
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Orientadores: Peter Jurgen Tatsch, Stanislav A. MoshkalyovDissertação (mestrado) - Universidade Esta...
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Atmospheric pressure plasma technologies are a potential substitution for wet chemical and vacuum pr...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1998.Includes...
Plasma etching is an essential process in the fabrication of subm cron features in the semiconductor...
The kinetics and mechanism of the title processes are discussed on the basis of a model in which the...
International audiencePlasma etching of HfO2 at an elevated temperature is investigated in chlorine-...
This animation, provided by Maricopa Advanced Technology Education Center (MATEC), illustrates how a...
The suitability of different plasma etch models based on various plasma chemistry has been evaluated...
Atmospheric pressure plasma technologies are a potential substitution for wet chemical and vacuum pr...
As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that d...
A surface chemistry model was developed to understand the mechanism of etching or deposition on sili...
The current semiconductor device manufacturing requires more strict control of plasma etching. In th...
International audienceDuring silicon gate etching in low pressure high density HBr/Cl2/O2 plasma, Si...
Surface phenomena during atomic layer etching (ALE) of SiO2 were studied during sequential half-cycl...
Orientadores: Peter Jurgen Tatsch, Stanislav A. MoshkalyovDissertação (mestrado) - Universidade Esta...
Surface phenomena during atomic layer etching (ALE) of SiO2 were studied during sequential half-cycl...
Atmospheric pressure plasma technologies are a potential substitution for wet chemical and vacuum pr...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1998.Includes...
Plasma etching is an essential process in the fabrication of subm cron features in the semiconductor...
The kinetics and mechanism of the title processes are discussed on the basis of a model in which the...
International audiencePlasma etching of HfO2 at an elevated temperature is investigated in chlorine-...