Add to ORKGCrystalline defects were studied in single crystalline ZnSe grown by chemical transport using I2 as gaseous carrier. Transmission electronic microscopy determined an excellent structural order in the micrometric and nanometric range. Larger material areas were studied by chemical etching using different reagents to determine average dislocations density and average adjacent subgrains misorientation. Comparable micrographic results of different reagents are shown. Characterization values of ZnSe commercial substrate grown by High Pressure Bridgman (HPB) have been compared to those that correspond to our grown material wafers. Characterization proved that the semiconductor crystalline quality in our wafers is appropriate for optical devices
In this paper we show that the reproducibility of carrier concentration after annealing treatment of...
The crystalline properties of ZnSe/(100)GaAs and ZnSSe/(100)GaAs structures are presented. ZnSe and ...
CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a hig...
ZnSe single crystals of high quality and low impurity levels are desired for use as substrates in op...
High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vap...
Complete and systematic ground-based experimental and theoretical analyses on the Physical Vapor Tra...
The influence of the growth temperature, undercooling, growth rate as well as growth chamber const...
ZnSe single crystals were grown from n-type microcrystalline boules by a Solid Phase Recrystallizati...
ZnSe single crystals were grown from n-type microcrystalline boules by :I solid phase recrystallizat...
The epitaxial growth of ZnSe on (100) Ge using the close-spaced transport process is described. Subs...
646-650The vapour phase chemical transport in a closed tube has been investigated for a ZnSe-I2 sys...
Se estudia la calidad cristalina de una oblea comercial monocristalina de ZnSe (Cradley Crystals) co...
The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(...
Both compensation and hydrogen-related phenomenon in ZnSe grown by MBE have been systematically inve...
ZnSe is a promising material for preparing blue light emitting diodes due to its suitable direct ban...
In this paper we show that the reproducibility of carrier concentration after annealing treatment of...
The crystalline properties of ZnSe/(100)GaAs and ZnSSe/(100)GaAs structures are presented. ZnSe and ...
CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a hig...
ZnSe single crystals of high quality and low impurity levels are desired for use as substrates in op...
High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vap...
Complete and systematic ground-based experimental and theoretical analyses on the Physical Vapor Tra...
The influence of the growth temperature, undercooling, growth rate as well as growth chamber const...
ZnSe single crystals were grown from n-type microcrystalline boules by a Solid Phase Recrystallizati...
ZnSe single crystals were grown from n-type microcrystalline boules by :I solid phase recrystallizat...
The epitaxial growth of ZnSe on (100) Ge using the close-spaced transport process is described. Subs...
646-650The vapour phase chemical transport in a closed tube has been investigated for a ZnSe-I2 sys...
Se estudia la calidad cristalina de una oblea comercial monocristalina de ZnSe (Cradley Crystals) co...
The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(...
Both compensation and hydrogen-related phenomenon in ZnSe grown by MBE have been systematically inve...
ZnSe is a promising material for preparing blue light emitting diodes due to its suitable direct ban...
In this paper we show that the reproducibility of carrier concentration after annealing treatment of...
The crystalline properties of ZnSe/(100)GaAs and ZnSSe/(100)GaAs structures are presented. ZnSe and ...
CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a hig...