Self-aligned GaAs JFET narrowband amplifiers operating at 2.4 GHz were designed and fabricated with both discrete WETS as a hybrid amplifier and as RFICS. Enhancement-mode JFETs were used in order to be compatible with complementary digital logic. Hybrid amplifiers achieved 8-10 dB of gain at 2.4 GHz and 1 mW DC bias level. The RFIC achieved 10 dB of gain at 24 GHz and 2 mW DC bias level
The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration i...
The progress of the Jet Propulsion Laboratory in developing gallium arsenide junction field-effect t...
This paper describes the design, fabrication and measured performance of a 4.9 to 6GHz Power Amplifi...
Self-aligned GaAs JFET narrowband amplifiers operating at 2.4 GHz were designed and fabricated with ...
In this work the authors report results of narrowband amplifiers designed for milliwatt and submilli...
Development of a complementary heterostructure field effect transistor (CHFET) technology for low-po...
Abstract — Circuit models of two discretely developed small-signal amplifiers are proposed and quali...
A refractory self-aligned gate fabrication process for gallium arsenide MESFETs has been developed a...
This report summarizes work on the development of ultra-low power microwave CHFET integrated circuit...
A self aligned complementary HIGFET technology has been developed for high speed/low power digital a...
150 GHz amplifiers fabricated on a commercial GaAs process with an fT of 135 GHz are presented. The ...
Development of a complementary heterostructure field effect transistor (CHFET) technology for low-po...
The performance of GaAs SSPA's is crucial to a rapidly increasing number of systems. This tutorial a...
The present paper is devoted to microwave transistors, developed in SRPC "Istok". Design, fabricatio...
A broadband amplifier chip has been fabricated using enhancement/depletion quantum-well FETs with 0....
The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration i...
The progress of the Jet Propulsion Laboratory in developing gallium arsenide junction field-effect t...
This paper describes the design, fabrication and measured performance of a 4.9 to 6GHz Power Amplifi...
Self-aligned GaAs JFET narrowband amplifiers operating at 2.4 GHz were designed and fabricated with ...
In this work the authors report results of narrowband amplifiers designed for milliwatt and submilli...
Development of a complementary heterostructure field effect transistor (CHFET) technology for low-po...
Abstract — Circuit models of two discretely developed small-signal amplifiers are proposed and quali...
A refractory self-aligned gate fabrication process for gallium arsenide MESFETs has been developed a...
This report summarizes work on the development of ultra-low power microwave CHFET integrated circuit...
A self aligned complementary HIGFET technology has been developed for high speed/low power digital a...
150 GHz amplifiers fabricated on a commercial GaAs process with an fT of 135 GHz are presented. The ...
Development of a complementary heterostructure field effect transistor (CHFET) technology for low-po...
The performance of GaAs SSPA's is crucial to a rapidly increasing number of systems. This tutorial a...
The present paper is devoted to microwave transistors, developed in SRPC "Istok". Design, fabricatio...
A broadband amplifier chip has been fabricated using enhancement/depletion quantum-well FETs with 0....
The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration i...
The progress of the Jet Propulsion Laboratory in developing gallium arsenide junction field-effect t...
This paper describes the design, fabrication and measured performance of a 4.9 to 6GHz Power Amplifi...