We predict theoretically and demonstrate experimentally the spontaneous formation of a superlattice during crystal growth. When a strained alloy grows by "step flow", the steps at the surface form periodic bunches. The resulting modulated strain biases the incorporation of the respective alloy components at different steps in the bunch, leading to the formation of a superlattice. X-ray diffraction and electron microscopy for SiGe grown on Si give clear evidence for such spontaneous superlattice formation
Results of self-consistent energy-minimization calculations provide strong evidence that the ordered...
This article presents the results of three-dimensional modeling of heteroepitaxial thin film growth ...
There exist numerous experimental data which indicate spontaneous formation of periodically ordered ...
We predict theoretically and demonstrate experimentally the spontaneous formation of a superlattice ...
Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant c...
High quality Si/Ge strained-layer superlattices composed of a sequence of alternating 3 monolayers p...
The growth of kinetically self-organized 2D islands in Si/Si(111) epitaxy is described. The island s...
A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge str...
A spontaneous growth instability which occurs in heteroepitaxy of strained systems is the Stranski-K...
International audienceSelf-ordering at crystal surfaces has been the subject of intense efforts duri...
Abstract Nano-structured superlattices may have novel physical properties and irradiation is a power...
Short-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substr...
International audienceMany recent advances in microelectronics would not have been possible without ...
It is found that the SiGe alloy self-organizers into uniform quantum dots embedded in the Si layer d...
Lattice mismatch strains are widely known to control nanoscale pattern formation in heteroepitaxy, ...
Results of self-consistent energy-minimization calculations provide strong evidence that the ordered...
This article presents the results of three-dimensional modeling of heteroepitaxial thin film growth ...
There exist numerous experimental data which indicate spontaneous formation of periodically ordered ...
We predict theoretically and demonstrate experimentally the spontaneous formation of a superlattice ...
Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant c...
High quality Si/Ge strained-layer superlattices composed of a sequence of alternating 3 monolayers p...
The growth of kinetically self-organized 2D islands in Si/Si(111) epitaxy is described. The island s...
A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge str...
A spontaneous growth instability which occurs in heteroepitaxy of strained systems is the Stranski-K...
International audienceSelf-ordering at crystal surfaces has been the subject of intense efforts duri...
Abstract Nano-structured superlattices may have novel physical properties and irradiation is a power...
Short-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substr...
International audienceMany recent advances in microelectronics would not have been possible without ...
It is found that the SiGe alloy self-organizers into uniform quantum dots embedded in the Si layer d...
Lattice mismatch strains are widely known to control nanoscale pattern formation in heteroepitaxy, ...
Results of self-consistent energy-minimization calculations provide strong evidence that the ordered...
This article presents the results of three-dimensional modeling of heteroepitaxial thin film growth ...
There exist numerous experimental data which indicate spontaneous formation of periodically ordered ...