放射線検出用 Ce 付活 Gd_2SiO_5 単結晶の育成と二三の物理的性質

The large Ce doped Gd_2SiO_5 single crystal as a scintillator was grown by the Czochralski method. The segrgation coefficient of Ce in Gd_2SiO_5 is 0.72. The light output distribution as the scintillation performance in the boule decreases 15% toward the bottom of the boule. We believe that this decresing of the light output is caused by impurities in the raw materials. Some physical properties such as the density, refraction index and the thermal expansion coefficients up to 600℃ are measured.The large Ce doped Gd_2SiO_5 single crystal as a scintillator was grown by the Czochralski method. The segrgation coefficient of Ce in Gd_2SiO_5 is 0.72. The light output distribution as the scintillation performance in the boule decreases 15% toward the bottom of the boule. We believe that this decresing of the light output is caused by impurities in the raw materials. Some physical properties such as the density, refraction index and the thermal expansion coefficients up to 600℃ are measured