Crystal Growth and Characterization of New Laser Crystal Bi_4Si_3O_<12> : Nd

The Bridgman growth of Nd doped BSO single crystals and their optical and laser properties are investigated. Good quality crystals were grown with Nd concentration varying from 0.5 to 5.0at%. Uniformity of Nd distribution in the crystals has been characterized by determining the absorption coefficient at different stages of crystallization. It has been found that the absorption coefficients at the peak wavelengths of 743 and 809nm were 34 and 19cm^, respectively, for 5.0 at% Nd doping. The distribution coefficient, k, of Nd in BSO was also determined by means of chemical analysis and it was found to be about 1.1. Fluorescence lifetime measurement was carried out and the lifetime of fluorescence intensity, τ_0 was calculated to be 267.7μs. Thermal conductivity of the grown crystals as a function of Nd concentration has also been measured.The Bridgman growth of Nd doped BSO single crystals and their optical and laser properties are investigated. Good quality crystals were grown with Nd concentration varying from 0.5 to 5.0at%. Uniformity of Nd distribution in the crystals has been characterized by determining the absorption coefficient at different stages of crystallization. It has been found that the absorption coefficients at the peak wavelengths of 743 and 809nm were 34 and 19cm^, respectively, for 5.0 at% Nd doping. The distribution coefficient, k, of Nd in BSO was also determined by means of chemical analysis and it was found to be about 1.1. Fluorescence lifetime measurement was carried out and the lifetime of fluorescence intensity, τ_0 was calculated to be 267.7μs. Thermal conductivity of the grown crystals as a function of Nd concentration has also been measured