Comparative Study of Multi-gate Nanowire Field Effect Transistor

A silicon multi-gate nanowire simulation is presented in this paper. The simulation studies are conducted based on electrical parameters such as Current-Voltage (I-V) characteristics, Mid-channel conduction band profile and mid- channel charge density profile using Nanohub Multi-gate Nanowire FET simulator. These characterization studies are performed to investigate the performance of silicon nanowire based on different gate arrangements in the device. We have simulated the silicon nanowire field effect transistors (FETs) with multiple gates such as double, tri, pi, omega and Gate-all-around gate structures using Nanohub simulation software. Effects of varying different parameters (such as Vgs and channel distance) in different devices and their effects are also presented.