Doping and electron-stimulated desorption of zinc selenide grown by molecular beam epitaxy

Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption rates under electron irradiation are significantly larger than thermal desorption rates. Electron irradiation decreases ZnSe growth rates under Zn-stable conditions, which can be suppressed by Se-stable conditions or use of (211)B oriented substrates. Electron irradiation does not alter composition during ZnMgSe growth.;Chlorine-doped ZnSe and ZnMgSe layers were grown to investigate solubility, native defects and chlorine-impurity-related defects. Cl was electrically active for levels up to 1 x 1019 cm-3 with compensation occurring beyond this point. Compensation appeared coupled to reduced growth rates for higher chlorine fluxes. Cl solubility is higher for ZnMgSe than ZnSe.;Cr incorporation in ZnSe was studied for achieving transition metal-doped lasers. Concentrations up to 4 x 1020 cm-3 were achieved. Photoluminescence indicates incorporation of optically active Cr2+ for Cr levels up to ∼1019 cm -3. High structural quality is maintained for Cr incorporation up to this level