In this study we have performed a numerical approach to investigate the optical properties of GaN/AlN quantum dots (QDs). We have used nice homemade finite element method (FEM) codes to solve the Schrödinger equation, in presence and absence of wetting layer. The optical properties of both well-known, truncated pyramids–shaped, wurtize (WZ) and zinc blande (ZB) QDs have been investigated. It is demonstrated, there is slight amount of difference between all orders of absorption coefficients and relative refractive index changes (RRIC) for both structures. The effect of relaxation rate studied as well. Overlay it is shown that the optical properties ZB/WZ QDs could be engineered in well-manner
In this thesis, we deal with the InGaAs/GaAs quantum dots and InGaN/GaN quantum systems. Both of the...
Full control over the density and emission properties of GaN quantum dots (QDs) should be feasible, ...
International audienceGaN/AlN quantum dots are semiconductor nanostructures where the huge conductio...
In this study we have performed a numerical approach to investigate the optical properties of GaN/Al...
The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacki...
As we demonstrated earlier, conventional mathematical models based on linear approximations may be i...
We report on time-integrated and -resolved photoluminescence (PL) data on self-assembled GaN quantum...
We studied the optical properties of wurtzite III-N heterostructures by means of various photolumine...
Quantum dots (QDs) are the result of quantum confinement in the three spatial directions, as such th...
A theoretical investigation of the binding energy, the radial probability distribution and optical p...
Intersubband transitions in semiconductor heterostructures have been intensively studied since the e...
Intersubband transitions in semiconductor heterostructures have been intensively studied since the m...
We have fabricated GaN quantum dots (QDs) in AlN confined layer structures by molecular beam epitaxy...
In a series of recent papers we demonstrated that coupled electromechanical effects can lead to pron...
In a series of recent papers we demonstrated that coupled electromechanical effects can lead to pron...
In this thesis, we deal with the InGaAs/GaAs quantum dots and InGaN/GaN quantum systems. Both of the...
Full control over the density and emission properties of GaN quantum dots (QDs) should be feasible, ...
International audienceGaN/AlN quantum dots are semiconductor nanostructures where the huge conductio...
In this study we have performed a numerical approach to investigate the optical properties of GaN/Al...
The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacki...
As we demonstrated earlier, conventional mathematical models based on linear approximations may be i...
We report on time-integrated and -resolved photoluminescence (PL) data on self-assembled GaN quantum...
We studied the optical properties of wurtzite III-N heterostructures by means of various photolumine...
Quantum dots (QDs) are the result of quantum confinement in the three spatial directions, as such th...
A theoretical investigation of the binding energy, the radial probability distribution and optical p...
Intersubband transitions in semiconductor heterostructures have been intensively studied since the e...
Intersubband transitions in semiconductor heterostructures have been intensively studied since the m...
We have fabricated GaN quantum dots (QDs) in AlN confined layer structures by molecular beam epitaxy...
In a series of recent papers we demonstrated that coupled electromechanical effects can lead to pron...
In a series of recent papers we demonstrated that coupled electromechanical effects can lead to pron...
In this thesis, we deal with the InGaAs/GaAs quantum dots and InGaN/GaN quantum systems. Both of the...
Full control over the density and emission properties of GaN quantum dots (QDs) should be feasible, ...
International audienceGaN/AlN quantum dots are semiconductor nanostructures where the huge conductio...