P(論文)ZnSe single crystal is made by the Bridgeman method under high inert gas pressure and its crystallographic characteristics are described. The lattice parameter of grown crystal is 5.667±0.003 Å and the twin structures along the directions are observed. There are two kinds of {111} planes in zinc blend type compounds, one is designated as {111} surfaces or A surfaces and the other as {111} surfaces or B surfaces. Their differences are determined by means of the anomalous dispersion of X-ray and are discussed in relation to etch patterns.departmental bulletin pape
ZnSe single crystals were grown from n-type microcrystalline boules by :I solid phase recrystallizat...
Halogen transport method was applied to grow the crystals of solid solutions of ZnSe and transition ...
739-743The ZnSe material synthesised by the fusion method was used to deposit 200 nm thin layers on ...
ZnSe is a promising material for preparing blue light emitting diodes due to its suitable direct ban...
One-dimensional ZnSe nanobelts with three-dimensional triple-crystal architecture have been fabricat...
One-dimensional ZnSe nanobelts with three-dimensional triple-crystal architecture have been fabricat...
ZnSe single crystals were grown from n-type microcrystalline boules by a Solid Phase Recrystallizati...
ZnSe single crystals of high quality and low impurity levels are desired for use as substrates in op...
The crystalline properties of ZnSe/(100)GaAs and ZnSSe/(100)GaAs structures are presented. ZnSe and ...
Chemical deposition of ZnSe (Zn/Se ratio, 0.57 <= x <= 0.99) thin films highlighting influence of re...
Zinc selenide (ZnSe) bicrystal nanobelts with zinc blende structure were obtained via simple thermal...
Zinc selenide layers have been grown on glass/conducting glass substrates using a low temperature (s...
ZnSe has been the primary candidate for blue light emitting diode and laser applications for years d...
We have obtained ZnSe single crystals by vertical Bridgman method. The surface was examined using sc...
SIGLEAvailable from British Library Document Supply Centre- DSC:2265.63F(BR--111748)(fiche) / BLDSC ...
ZnSe single crystals were grown from n-type microcrystalline boules by :I solid phase recrystallizat...
Halogen transport method was applied to grow the crystals of solid solutions of ZnSe and transition ...
739-743The ZnSe material synthesised by the fusion method was used to deposit 200 nm thin layers on ...
ZnSe is a promising material for preparing blue light emitting diodes due to its suitable direct ban...
One-dimensional ZnSe nanobelts with three-dimensional triple-crystal architecture have been fabricat...
One-dimensional ZnSe nanobelts with three-dimensional triple-crystal architecture have been fabricat...
ZnSe single crystals were grown from n-type microcrystalline boules by a Solid Phase Recrystallizati...
ZnSe single crystals of high quality and low impurity levels are desired for use as substrates in op...
The crystalline properties of ZnSe/(100)GaAs and ZnSSe/(100)GaAs structures are presented. ZnSe and ...
Chemical deposition of ZnSe (Zn/Se ratio, 0.57 <= x <= 0.99) thin films highlighting influence of re...
Zinc selenide (ZnSe) bicrystal nanobelts with zinc blende structure were obtained via simple thermal...
Zinc selenide layers have been grown on glass/conducting glass substrates using a low temperature (s...
ZnSe has been the primary candidate for blue light emitting diode and laser applications for years d...
We have obtained ZnSe single crystals by vertical Bridgman method. The surface was examined using sc...
SIGLEAvailable from British Library Document Supply Centre- DSC:2265.63F(BR--111748)(fiche) / BLDSC ...
ZnSe single crystals were grown from n-type microcrystalline boules by :I solid phase recrystallizat...
Halogen transport method was applied to grow the crystals of solid solutions of ZnSe and transition ...
739-743The ZnSe material synthesised by the fusion method was used to deposit 200 nm thin layers on ...