Measurement and Analysis of GaAs Solar Cells

III-V compound semiconductor have been receiving increasing research interest due to their unique optical, electrical, and magnetic properties. In this report, we investigate the photovoltaic properties of GaAs metal-semiconductor (M-S) Schottky junction solar cells, such as open-circuit voltage (Voc), short-circuit current (Isc), and fill factor (FF). A home-made solar simulator setup is used in order to test the solar cells with different top electrode structures under industry lighting standards of AM1.5g 1000 W/cm2. The characteristics of Schottky junction diodes, such as Schottky barrier height, ideality factor, series resistance, are also extracted using the I-V curves plotted with OriginLab data analysis software