The nature and composition of the surfaces of silicon nitride and silicon carbide powders were investigated using high voltage and high resolution transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS). An amorphous oxide (or oxygen-rich) layer, approximately equals 3-5 nm thick, present on the powder surfaces forms strong bridges between particles. Both XPS and SIMS show that oxygen is the major impurity on the powder surfaces, but minor impurities such as chlorine, fluorine, carbon, iron, and sodium are also revealed. The extent of the oxide layer was reduced substantially by washing the powder in anhydrous hydrofluoric acid or by treatment in an argon/hydrogen gas mixtur...
Due to the high surface area of the powder, reactivity of the material is significantly enhanced mea...
X-ray photoelectron spectroscopy, high resolution cross-sectional transmission electron microscopy (...
Compacts of high-purity silicon powder were pretreated in hydrogen or argon to remove the surface si...
The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide ...
Previous studies have shown that the oxide layer on the surface of silicon particles can reduce the ...
Silicon nitride powder was modified with different alkoxysilanes. The chemisorption of the silanes a...
The surface charge densities of silicon nitride powders in NaNO3 solutions of various concentrations...
The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2...
Porous silicon is generally achieved through electro-chemical etching or chemical etching of bulk si...
The paper considers structural and physicomechanical properties of silicon-carbon coatings deposited...
In the present study the corrosion behavior of various silicon nitride materials will be presented. ...
Chemical mechanical polishing (CMP) removal mechanisms of on-axis Si-face SiC wafer have been inves...
Chemical mechanical polishing (CMP) removal mechanisms of on-axis Si-face SiC wafer have been invest...
The plasma treatments of silicon and silicon carbide surfaces with 3-aminopropyl-triethoxysilane (3-...
The oxidation kinetics of amorphous silicon carbonitride (SiCN) was measured at 1350°C in ambient a...
Due to the high surface area of the powder, reactivity of the material is significantly enhanced mea...
X-ray photoelectron spectroscopy, high resolution cross-sectional transmission electron microscopy (...
Compacts of high-purity silicon powder were pretreated in hydrogen or argon to remove the surface si...
The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide ...
Previous studies have shown that the oxide layer on the surface of silicon particles can reduce the ...
Silicon nitride powder was modified with different alkoxysilanes. The chemisorption of the silanes a...
The surface charge densities of silicon nitride powders in NaNO3 solutions of various concentrations...
The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2...
Porous silicon is generally achieved through electro-chemical etching or chemical etching of bulk si...
The paper considers structural and physicomechanical properties of silicon-carbon coatings deposited...
In the present study the corrosion behavior of various silicon nitride materials will be presented. ...
Chemical mechanical polishing (CMP) removal mechanisms of on-axis Si-face SiC wafer have been inves...
Chemical mechanical polishing (CMP) removal mechanisms of on-axis Si-face SiC wafer have been invest...
The plasma treatments of silicon and silicon carbide surfaces with 3-aminopropyl-triethoxysilane (3-...
The oxidation kinetics of amorphous silicon carbonitride (SiCN) was measured at 1350°C in ambient a...
Due to the high surface area of the powder, reactivity of the material is significantly enhanced mea...
X-ray photoelectron spectroscopy, high resolution cross-sectional transmission electron microscopy (...
Compacts of high-purity silicon powder were pretreated in hydrogen or argon to remove the surface si...