Preferential Silicon Site Occupation in Y₂Fe₁₄₋ₓSiₓB

Marasinghe, Gaya Kanishka
Pringle, Oran Allan
Long, Gary J.
Grandjean, Fernande
Yelon, William B.

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Publication date

September 1989

DOI

10.1109/20.281021

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

ISSN

0018-9464

Citation count (estimate)

Abstract

Neutron-diffraction and Mössbauer effect studies of Y2Fe14-xSixB, where x is 0.28, 0.67, and 1.87, show that silicon preferentially occupies the 4c site in the R2Fe14B structure. If the breaking of short iron-iron bonds is the mechanism for the increase in the Curie temperature of R2Fe14-xSixB, then the bonds most responsible for the increase are those between iron atoms on the 16k2 and 4c sites

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Preferential Silicon Site Occupation in Y₂Fe₁₄₋ₓSiₓB

Abstract

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Preferential Silicon Site Occupation in Y₂Fe₁₄₋ₓSiₓB

Abstract

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