Add to ORKGA simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments
The degradation of solar cells under irradiation by high energy particles (electrons, protons) is th...
Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and ...
For nearly two decades, deviations between experimental data and the nonionizing energy loss (NIEL) ...
A simple proton damage model for GaAs solar cells is derived and compared to experimental values of ...
In this study a recently developed physics-based model to describe the performance degradation of Ga...
An analysis of the effects of low energy proton irradiation on the electrical performance of triple ...
Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forw...
A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium a...
A comprehensive performance study of the effects of proton irradiation on production Si, GaAs and Ga...
The space environment is very harsh on photovoltaic devices. Solar protons (hydrogen ions) cause la...
Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV o...
A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar...
Energetic particles such as electrons and protons induce severe degradation on the performance of so...
Recent results of electron and proton irradiation and annealing of GaAs solar cells are presented al...
In this work we present our latest results and analysis of a 10 MeV proton irradiation experiment pe...
The degradation of solar cells under irradiation by high energy particles (electrons, protons) is th...
Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and ...
For nearly two decades, deviations between experimental data and the nonionizing energy loss (NIEL) ...
A simple proton damage model for GaAs solar cells is derived and compared to experimental values of ...
In this study a recently developed physics-based model to describe the performance degradation of Ga...
An analysis of the effects of low energy proton irradiation on the electrical performance of triple ...
Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forw...
A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium a...
A comprehensive performance study of the effects of proton irradiation on production Si, GaAs and Ga...
The space environment is very harsh on photovoltaic devices. Solar protons (hydrogen ions) cause la...
Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV o...
A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar...
Energetic particles such as electrons and protons induce severe degradation on the performance of so...
Recent results of electron and proton irradiation and annealing of GaAs solar cells are presented al...
In this work we present our latest results and analysis of a 10 MeV proton irradiation experiment pe...
The degradation of solar cells under irradiation by high energy particles (electrons, protons) is th...
Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and ...
For nearly two decades, deviations between experimental data and the nonionizing energy loss (NIEL) ...