Nanowire Crossbar PLA with Adaptive Variable Redundancy

Fundamental electronic structures such as Diodes and FETs have been shown to be constructed using selectively doped semiconducting Carbon Nanotubes or Silicon Nanowires (CNTs, SiNWs) at nanometer scale. Memory and Logic cores s have been proposed, that use the configurable junctions in 2-D crossbars of CNTs. These Memory and Logic arrays at this scale exhibit a significant amount of defects that account for poor a yield. Configuration of these devices in the presence of defects demands an overhead in terms of area and programming time. This work introduces a PLA configuration that makes use of design-specific redundancy in terms of the number of nanowires. This is done in order to simplify the process of programming the PLA, increase the yield, reduce the time complexity, and in turn, reduce the cost of the system