RF power, when approaching the handling capacity of microelectromechanical capacitive switches, was found to accelerate both the charging and discharging of the dielectric in the switches. The amount of acceleration appeared to be greater than what could be explained by self biasing and self heating. Since the long-term reliability of the switches is limited by dielectric charging, the RF power-handling capacity of the switches may have to be derated to ensure long-term reliability
This paper investigates both theoretically and experimentally the dielectric charging effects of cap...
This paper presents numerical simulation results for a novel constant-charge (CC) biasing method for...
In this study, degradation mechanisms in Radio Frequency Micro-Electromechanical systems (RF MEMS) c...
Abstract—To design and validate accelerated life tests of RF MEMS capacitive switches, acceleration ...
We report, for the first time, the benefit of RF burn-in at power levels significantly higher than t...
ABSTRACT — The first experimental characterization of dielectric charging within capacitive RF MEMS ...
The charging processes have been investigated in dielectrics used in RF MEMS capacitive switches. Th...
The charging processes have been investigated in dielectrics used in RF MEMS capacitive switches. Th...
Dielectric charges cause stiction problems in most capacitive RF-MEMS switches, creating a major rel...
A major issue in the reliability of RF MEMS capacitive switches is charge injection in the dielectri...
Based on a one-dimensional model of dielectric charging for capacitive RF MEMS switches, the accumul...
Abstract — The reliability of electrostatically actuated RF MEMS switches is reviewed with emphasis...
This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and re...
RF MEMS switch is becoming the preferred choice for RF switching due to its outstanding performance ...
Abstract—A transient simulation program with integrated cir-cuit emphasis (SPICE) model for dielectr...
This paper investigates both theoretically and experimentally the dielectric charging effects of cap...
This paper presents numerical simulation results for a novel constant-charge (CC) biasing method for...
In this study, degradation mechanisms in Radio Frequency Micro-Electromechanical systems (RF MEMS) c...
Abstract—To design and validate accelerated life tests of RF MEMS capacitive switches, acceleration ...
We report, for the first time, the benefit of RF burn-in at power levels significantly higher than t...
ABSTRACT — The first experimental characterization of dielectric charging within capacitive RF MEMS ...
The charging processes have been investigated in dielectrics used in RF MEMS capacitive switches. Th...
The charging processes have been investigated in dielectrics used in RF MEMS capacitive switches. Th...
Dielectric charges cause stiction problems in most capacitive RF-MEMS switches, creating a major rel...
A major issue in the reliability of RF MEMS capacitive switches is charge injection in the dielectri...
Based on a one-dimensional model of dielectric charging for capacitive RF MEMS switches, the accumul...
Abstract — The reliability of electrostatically actuated RF MEMS switches is reviewed with emphasis...
This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and re...
RF MEMS switch is becoming the preferred choice for RF switching due to its outstanding performance ...
Abstract—A transient simulation program with integrated cir-cuit emphasis (SPICE) model for dielectr...
This paper investigates both theoretically and experimentally the dielectric charging effects of cap...
This paper presents numerical simulation results for a novel constant-charge (CC) biasing method for...
In this study, degradation mechanisms in Radio Frequency Micro-Electromechanical systems (RF MEMS) c...