Add to ORKGZince and oxygen doped gallium phosphide crystals were solution grown at 1170 C. Debye-Scherrer film and Laue patterns indicated that GaP single crystals were grown with the face parallel to a plane. Resistivity and Hall effect measurements were made from which carrier concentrations and mobilities were calculated
Activator-free zinc aluminate (ZA) nanophosphor was synthesized through a sol–gel combustion route, ...
Evolution of luminescence is reported from GaP crystals that were grown over 40 years ago. This is t...
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at differen...
We have studied the laser thermal annealing (LTA) effects on single crystal GaP. The samples have be...
The results of luminescence studies conducted on the same samples of GaP over a 40-year period are d...
Studies of metallurgical, electrical, and optical properties of gallium phosphid
Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sourc...
The results of luminescence studies conducted on the same samples of GaP over a 40-year period are d...
Evolution of luminescence is reported from GaP crystals that were grown over 40 years ago. This is t...
Summary information on various studies to determine metallurgical, electrical, and optical propertie...
Since the mid-1990s, phosphors have played a key role in emerging solidstate white-lighting technolo...
Semiconductor photocatalyst have been of interest due to its robust nature, non-selectivity, low tox...
Journal ArticlePresents doping studies of gallium[sub0.5] indium[sub0.5] phosphorus organometallic v...
We have investigated the pulse laser melting (PLM) effects on single crystal Gal?. The samples have ...
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaA
Activator-free zinc aluminate (ZA) nanophosphor was synthesized through a sol–gel combustion route, ...
Evolution of luminescence is reported from GaP crystals that were grown over 40 years ago. This is t...
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at differen...
We have studied the laser thermal annealing (LTA) effects on single crystal GaP. The samples have be...
The results of luminescence studies conducted on the same samples of GaP over a 40-year period are d...
Studies of metallurgical, electrical, and optical properties of gallium phosphid
Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sourc...
The results of luminescence studies conducted on the same samples of GaP over a 40-year period are d...
Evolution of luminescence is reported from GaP crystals that were grown over 40 years ago. This is t...
Summary information on various studies to determine metallurgical, electrical, and optical propertie...
Since the mid-1990s, phosphors have played a key role in emerging solidstate white-lighting technolo...
Semiconductor photocatalyst have been of interest due to its robust nature, non-selectivity, low tox...
Journal ArticlePresents doping studies of gallium[sub0.5] indium[sub0.5] phosphorus organometallic v...
We have investigated the pulse laser melting (PLM) effects on single crystal Gal?. The samples have ...
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaA
Activator-free zinc aluminate (ZA) nanophosphor was synthesized through a sol–gel combustion route, ...
Evolution of luminescence is reported from GaP crystals that were grown over 40 years ago. This is t...
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at differen...