Add to ORKGWe report a low temperature Ti/Ni/Ti/Au multilayered Ohmic contact to n-type 6H-SiC bulk sample. By using this simple metallization scheme and annealing at 750 degreesC, a low contact resistance is achieved for vertical conduction. Similar contact scheme on polished and unpolished sides of the bulk SiC substrate showed a difference in resistance due to different surface roughness. Xray diffraction results of the alloyed contact layer show that formation of TiSi2 layer might be responsible for the Ohmic contact. The roughness of the contact surface on the polished side and unpolished sides are found to be 5 and 38 nm, respectively. (C) 2003 Elsevier Science B.V. All rights reserved
In this work, Ti/Ni bilayer contacts were fabricated on both p (+)- and n (+)-4H-SiC formed by ion i...
This paper presents two contacting methods for 4H-SiC power devices: layered metal and highly doped ...
We report on wafer-level measurements of the long-term stability of Ti and Ni ohmic contacts to n-4H...
We report preliminary electrical and diffusion barrier characteristics of Ti (100nm)/TaSi2 (200nm)/P...
We present the results of TiNiTiAu multilayer ohmic contacts on n -type 6H-SiC and their interface a...
Abstract: Ti/WSi/Ni contact to n-type SiCN was investigated using the circular transmission line met...
The fabrication of low-resistance and thermal stable ohmic contacts is important for realization of ...
International audienceTransfer Length Method (TLM) based-structures were fabricated on 0.8 µm-thick ...
This paper presents a detailed physical and electrical analysis of 4H-SiC ohmic contacts to p-type m...
In this work, we have investigated triple and innovative multiple stacked contacts onto p-type SiC i...
In this paper, an experimental investigation into titanium (Ti) / aluminium (Al)-based ohmic contact...
Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, ...
SiC is a promising wide bandgap semiconductor material for active electronic devices. An important p...
Ohmic contact is important for silicon carbide (SiC) devices such as Schottky diode, junction field ...
In this paper, an experimental investigation into titanium (Ti) / aluminium (Al)-based ohmic contac...
In this work, Ti/Ni bilayer contacts were fabricated on both p (+)- and n (+)-4H-SiC formed by ion i...
This paper presents two contacting methods for 4H-SiC power devices: layered metal and highly doped ...
We report on wafer-level measurements of the long-term stability of Ti and Ni ohmic contacts to n-4H...
We report preliminary electrical and diffusion barrier characteristics of Ti (100nm)/TaSi2 (200nm)/P...
We present the results of TiNiTiAu multilayer ohmic contacts on n -type 6H-SiC and their interface a...
Abstract: Ti/WSi/Ni contact to n-type SiCN was investigated using the circular transmission line met...
The fabrication of low-resistance and thermal stable ohmic contacts is important for realization of ...
International audienceTransfer Length Method (TLM) based-structures were fabricated on 0.8 µm-thick ...
This paper presents a detailed physical and electrical analysis of 4H-SiC ohmic contacts to p-type m...
In this work, we have investigated triple and innovative multiple stacked contacts onto p-type SiC i...
In this paper, an experimental investigation into titanium (Ti) / aluminium (Al)-based ohmic contact...
Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, ...
SiC is a promising wide bandgap semiconductor material for active electronic devices. An important p...
Ohmic contact is important for silicon carbide (SiC) devices such as Schottky diode, junction field ...
In this paper, an experimental investigation into titanium (Ti) / aluminium (Al)-based ohmic contac...
In this work, Ti/Ni bilayer contacts were fabricated on both p (+)- and n (+)-4H-SiC formed by ion i...
This paper presents two contacting methods for 4H-SiC power devices: layered metal and highly doped ...
We report on wafer-level measurements of the long-term stability of Ti and Ni ohmic contacts to n-4H...