In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz
- Khalid, A.
- Li, C.
- Papageogiou, V.
- Dunn, G. M.
- Steer, M. J.
- Thayne, I. G,
- Kuball, M.
- Oxley, C. H.
- Montes, Miguel
- Stephen, A.
- Glover, James
- Cumming, D. R. S.
Publication date
January 2013
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately −10 dBm at 164 GHz
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