Energy traps at the silicon surface originating from discontinuities in the lattice is detrimental to the performance of solar cells. Acting as recombination centers, they offer a location where the charge carriers may easily return to their original energy band after excitation. Surface passivation is an effective method to combat this and can be done either by suppressing traps (lowering trap density) or by forming an electric field, preventing the carriers from reaching the defect states. Silicon oxide, SiO2, and aluminum oxide, Al2O3, are two materials which have previously been shown to provide good passivating qualities. In this thesis, SiO2 and Al2O3 have been used both as single layers and in a stack configuration to passivate the s...
The surface passivation of c-Si by atomic layer deposited (ALD) Al2O3 has recently gained considerab...
The surface passivation of c-Si by atomic layer deposited (ALD) Al2O3 has recently gained considerab...
This thesis is concerned with nanolayer surface passivation schemes and corresponding deposition pro...
Energy traps at the silicon surface originating from discontinuities in the lattice is detrimental t...
The surface passivation of c-Si by atomic layer deposited (ALD) Al2O3 has recently gained considerab...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
For silicon surface passivation, we investigate stack layers consisting of a thin Al₂O₃ layer and a ...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Al 2 O 3 has rapidly become the surface passivation material of choice for p + layers of solar cells...
In this work atomic layer deposition of Al2O3 and TiO2 has been used to obtain dielectric stacks for...
The surface passivation of c-Si by atomic layer deposited (ALD) Al2O3 has recently gained considerab...
The surface passivation of c-Si by atomic layer deposited (ALD) Al2O3 has recently gained considerab...
This thesis is concerned with nanolayer surface passivation schemes and corresponding deposition pro...
Energy traps at the silicon surface originating from discontinuities in the lattice is detrimental t...
The surface passivation of c-Si by atomic layer deposited (ALD) Al2O3 has recently gained considerab...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
For silicon surface passivation, we investigate stack layers consisting of a thin Al₂O₃ layer and a ...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Al 2 O 3 has rapidly become the surface passivation material of choice for p + layers of solar cells...
In this work atomic layer deposition of Al2O3 and TiO2 has been used to obtain dielectric stacks for...
The surface passivation of c-Si by atomic layer deposited (ALD) Al2O3 has recently gained considerab...
The surface passivation of c-Si by atomic layer deposited (ALD) Al2O3 has recently gained considerab...
This thesis is concerned with nanolayer surface passivation schemes and corresponding deposition pro...