International audiencePrinted Circuit Boards (PCBs) are often used to mount gallium nitride transistors, as they offer good electrical performance. However, their thermal conductivity is not as good as with ceramic substrates. In this paper, we compare (experimentally and by simulation) both the electrical and thermal performances of GaN transistor mounted on PCBs and ceramic substrates, and we show that with a proper layout, the ceramic substrates can offer both a very good thermal management (thermal resistance 4 times lower than with PCB) and suitable electrical performance (parasitic inductances of 1–2 nH)
While still expanding in the microwave arena, GaN-based HEMTs are increasingly making their way into...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Com...
The main objective of this final year project is to do thermal analysis of the high-voltage AlGaN/Ga...
International audiencePrinted Circuit Boards (PCBs) are often used to mount gallium nitride transist...
International audienceGaN transistors require extremely short connexions (parasitic inductance of a ...
This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circu...
International audienceThis article investigates several thermal management techniques for GaN transi...
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditiona...
Gallium nitride high electron mobility transistors (GaN HEMTs) have gained popularity in recent year...
This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates,...
This work deals with optimization of boards with commercial discrete power GaN FETs in applications ...
The paper presents a discussion on the thermal design of integrated power GaN devices. After a short...
wan hermal imager Power electronics Thermal management package. Experimental tests of a 30 mm gate-p...
To study the working performance of 3D stacked chips, a double-layer stacked GaN MISHEMTs structure ...
Consumers and military personnel are demanding faster data speeds only available through fifth gener...
While still expanding in the microwave arena, GaN-based HEMTs are increasingly making their way into...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Com...
The main objective of this final year project is to do thermal analysis of the high-voltage AlGaN/Ga...
International audiencePrinted Circuit Boards (PCBs) are often used to mount gallium nitride transist...
International audienceGaN transistors require extremely short connexions (parasitic inductance of a ...
This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circu...
International audienceThis article investigates several thermal management techniques for GaN transi...
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditiona...
Gallium nitride high electron mobility transistors (GaN HEMTs) have gained popularity in recent year...
This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates,...
This work deals with optimization of boards with commercial discrete power GaN FETs in applications ...
The paper presents a discussion on the thermal design of integrated power GaN devices. After a short...
wan hermal imager Power electronics Thermal management package. Experimental tests of a 30 mm gate-p...
To study the working performance of 3D stacked chips, a double-layer stacked GaN MISHEMTs structure ...
Consumers and military personnel are demanding faster data speeds only available through fifth gener...
While still expanding in the microwave arena, GaN-based HEMTs are increasingly making their way into...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Com...
The main objective of this final year project is to do thermal analysis of the high-voltage AlGaN/Ga...