Add to ORKGSingle-event effects and total ionizing dose testing is described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results
The purpose of this testing was to characterize the Texas Instruments SNV54LVC00AW for single-event ...
Flash memories operating in space are subject at the same time to the progressive accumulation of to...
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and fou...
We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D...
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed...
Heavy-ion test data for 3D NAND flash memories is presented, along with a discussion of modern testi...
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and fou...
We compare radiation effects on the highest density multi-level cell NOR and single-level cell NAND ...
This paper studies the system-level reliability of 16nm MLC NAND flash memories under total ionizing...
The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for ...
Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are repo...
We analyzed floating-gate upsets in 25-nm multilevel cell NAND Flash memories irradiated with heavy ...
We study total dose effects in advanced multi- and single-level NAND Flash memories. We discuss rete...
Space applications frequently use flash memories for mass storage data. However, the technology appl...
abstract: Non-volatile memory (NVM) has become a staple in the everyday life of consumers. NVM manif...
The purpose of this testing was to characterize the Texas Instruments SNV54LVC00AW for single-event ...
Flash memories operating in space are subject at the same time to the progressive accumulation of to...
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and fou...
We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D...
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed...
Heavy-ion test data for 3D NAND flash memories is presented, along with a discussion of modern testi...
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and fou...
We compare radiation effects on the highest density multi-level cell NOR and single-level cell NAND ...
This paper studies the system-level reliability of 16nm MLC NAND flash memories under total ionizing...
The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for ...
Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are repo...
We analyzed floating-gate upsets in 25-nm multilevel cell NAND Flash memories irradiated with heavy ...
We study total dose effects in advanced multi- and single-level NAND Flash memories. We discuss rete...
Space applications frequently use flash memories for mass storage data. However, the technology appl...
abstract: Non-volatile memory (NVM) has become a staple in the everyday life of consumers. NVM manif...
The purpose of this testing was to characterize the Texas Instruments SNV54LVC00AW for single-event ...
Flash memories operating in space are subject at the same time to the progressive accumulation of to...
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and fou...