Electroluminescence of Single InGaN/GaN Micropyramids
- Babichev, A. V.
- Denisov, D. V.
- Lavenus, P.
- Jacopin, G.
- Tchernycheva, M.
- Julien, F. H.
- Zhang, H.
DOIAbstract
The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520-590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications
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