Add to ORKGInternational audienceZ²-FET, a partially gated diode, was explored for ESD application due to its sharp switching behavior [1,2]. 1T-DRAM application of Z²-FET has recently been evidenced [3,4] leading to an even stronger interest for this device. However, a deep explanation of physical phenomena involved in Z²-FET operation has not been proposed yet. In this paper, we provide a detailed description of the Z²-FET DC behavior based on TCAD simulations and propose corresponding analytical modeling
This thesis is dedicated to studying sharp switching devices, including the tunneling field-effect-t...
A recently reported zero impact ionization and zero subthreshold swing device Z2FET is a promising c...
The experimental time-dependent dielectric breakdown and ON voltage reliability of advanced FD-SOI Z...
International audienceZ²-FET, a partially gated diode, was explored for ESD application due to its s...
session 12: Future Devices (12.2)International audienceZ 2 -FET, a partially gated diode, was explor...
The Z²-FET operation as capacitorless DRAM is analyzed using advanced 2-D TCAD simulations for IoT ...
This work presents a TCAD investigation of the operation of a Z2FET device for memory application, w...
This article has been accepted for publication by IEEE "Navarro Moral, C.; et al. Extended analysis ...
3-D numerical technology computer-aided design simulations, based on experimental results, are perfo...
This paper addresses the low-frequency noise characterization of Z2-FET structures. These double-ga...
International audienceThe Z 2 -FET operation as capacitorless DRAM is analyzed using advanced 2-D TC...
The band-modulation and sharp-switching mechanisms in Z²-FET device operated as a capacitorless 1T-D...
session A4L-F: Emerging Devices and ApplicationsInternational audienceA logic switch for integrated ...
This thesis is dedicated to studying sharp switching devices, including the tunneling field-effect-t...
A recently reported zero impact ionization and zero subthreshold swing device Z2FET is a promising c...
The experimental time-dependent dielectric breakdown and ON voltage reliability of advanced FD-SOI Z...
International audienceZ²-FET, a partially gated diode, was explored for ESD application due to its s...
session 12: Future Devices (12.2)International audienceZ 2 -FET, a partially gated diode, was explor...
The Z²-FET operation as capacitorless DRAM is analyzed using advanced 2-D TCAD simulations for IoT ...
This work presents a TCAD investigation of the operation of a Z2FET device for memory application, w...
This article has been accepted for publication by IEEE "Navarro Moral, C.; et al. Extended analysis ...
3-D numerical technology computer-aided design simulations, based on experimental results, are perfo...
This paper addresses the low-frequency noise characterization of Z2-FET structures. These double-ga...
International audienceThe Z 2 -FET operation as capacitorless DRAM is analyzed using advanced 2-D TC...
The band-modulation and sharp-switching mechanisms in Z²-FET device operated as a capacitorless 1T-D...
session A4L-F: Emerging Devices and ApplicationsInternational audienceA logic switch for integrated ...
This thesis is dedicated to studying sharp switching devices, including the tunneling field-effect-t...
A recently reported zero impact ionization and zero subthreshold swing device Z2FET is a promising c...
The experimental time-dependent dielectric breakdown and ON voltage reliability of advanced FD-SOI Z...