Preparation of InAs nanowires by MBE

The bachelor’s thesis deals with growth of InAs nanowires grown on silicon substrate by molecular beam epitaxy. The emphasis is mainly layed on fabrication of nanowires grown via Vapour-Liquid-Solid mechanism using gold catalytic nanoparticles. There is a brief description of two most common mechanisms of nanowire growth in the first part of the thesis. The text also discusses crystal structure of InAs and doping options of InAs nanowires. The experimental part is aimed at deposition and the impact of different growth conditions on both growth mechanism and nanowire morphology