Add to ORKGThe transformation of silicon to the amorphous state by implanted ions into Si (100) at room temperature was studied theoretically. The critical role of point defects (Frenkel pair) produced by ion implantation in enhanced diffusion also been recognized. A theoretical model of production and relaxation of stress in ion – implanted silicon is proposed. The integrated stress acting in a damaged layer has been studied as function of the Xe ions. Ion energy 220keV and 2MeV, and dose in the range up 1013 cm-2Vytauto Didžiojo universitetasŽemės ūkio akademij
The model of transient enhanced diffusion of arsenic in silicon taking into account the effect of th...
The transformation of silicon to the amorphous state by implanted ions was studied both experimental...
The transformation of silicon to the amorphous state by implanted ions was studied both experimental...
A new understanding of the damage formation mechanisms in Si is developed and investigated over an e...
149 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.The diffuse X-ray scattering ...
Measurements of stress evolution during low energy argon ion bombardment of Si have been made using ...
149 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.The diffuse X-ray scattering ...
The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O an...
The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O an...
New insight into damage formation in Si(100) during self-ion irradiation is gained from processing u...
Damage in Si induced by irradiation with various light/medium mass ions at elevated temperatures and...
Damage in Si induced by irradiation with various light/medium mass ions at elevated temperatures and...
A model is presented to account for the effects of ion-induced defects during implantation processin...
The pre-amorphization damage structure in high-energy ion-implanted Si was studied to better underst...
Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon...
The model of transient enhanced diffusion of arsenic in silicon taking into account the effect of th...
The transformation of silicon to the amorphous state by implanted ions was studied both experimental...
The transformation of silicon to the amorphous state by implanted ions was studied both experimental...
A new understanding of the damage formation mechanisms in Si is developed and investigated over an e...
149 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.The diffuse X-ray scattering ...
Measurements of stress evolution during low energy argon ion bombardment of Si have been made using ...
149 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.The diffuse X-ray scattering ...
The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O an...
The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O an...
New insight into damage formation in Si(100) during self-ion irradiation is gained from processing u...
Damage in Si induced by irradiation with various light/medium mass ions at elevated temperatures and...
Damage in Si induced by irradiation with various light/medium mass ions at elevated temperatures and...
A model is presented to account for the effects of ion-induced defects during implantation processin...
The pre-amorphization damage structure in high-energy ion-implanted Si was studied to better underst...
Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon...
The model of transient enhanced diffusion of arsenic in silicon taking into account the effect of th...
The transformation of silicon to the amorphous state by implanted ions was studied both experimental...
The transformation of silicon to the amorphous state by implanted ions was studied both experimental...