CdSe AND In-DOPED CdSe THIN FILMS

In this study, semiconducting thin films of undoped and In doped CdSe have been deposited by conventional thermal evaporation technique on cold glass substrates. The structural and electrical properties of the films have been investigated by means of XRD, SEM, temperature dependent electrical conductivity and Hall Effect measurements. X-ray diffraction (XRD) analysis indicated preferential orientation in the (002) direction. XRD and SEM measurements presented an increase of grain size from 26 to 29 nm with In doping. Conductivity measurements showed that In doping causes an increase in conductivity around four orders of magnitude. Information about the band gap of these films has been investigated by means of spectral distribution of photocurrent and absorption measurements. The band gap energies calculated from photoconductivity measurements and compared with results deduced from absorption spectra