Many emerging applications in the terahertz (THz)frequency range demand highly sensitive, broadband detectorsfor room-temperature operation. Field-effect transistors with in-tegrated antennas for THz detection (TeraFETs) have proven tomeet these requirements, at the same time offering great potentialfor scalability, high-speed operation, and functional integrability
Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was ...
A 16-pixel terahertz (THz) receiver front-end working at room temperature was designed, built, and m...
AlGaN/GaN HEMTs [1,2] and nMOS [3] transistors are reported as the most sensitive field effect trans...
This letter focuses on the fabrication and characterization of a terahertz detector integrated with ...
In this study, we fabricated three kinds of terahertz detectors with different leakage currents to a...
We present broadband high sensitivity terahertz (THz) detectors based on 90 nm CMOS technology with ...
We report a sub-terahertz (THz) detector based on a 0.25-µm-gate-length AlGaN/GaN high-electron-mobi...
We fabricated in-house Field Effect Transistors detectors on GaN-heterostructures where we integrate...
We present results of investigations of Plasma Assisted Molecular Beam Epitaxy (PAMBE) - grown GaN/A...
The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave p...
A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detect...
<div id="articleAbsctract"> <p> An optimized micro-gated terahertz detector with novel triple res...
Detection of THz Radiation in "Bow-tie" Antenna-coupled GaN Field-effect Tranzistor
The rapidly expanding applications of THz-frequency radiation encourages the research of new materia...
We used AlGaN/GaN high electron mobility transistors as room-temperature direct detectors of radiati...
Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was ...
A 16-pixel terahertz (THz) receiver front-end working at room temperature was designed, built, and m...
AlGaN/GaN HEMTs [1,2] and nMOS [3] transistors are reported as the most sensitive field effect trans...
This letter focuses on the fabrication and characterization of a terahertz detector integrated with ...
In this study, we fabricated three kinds of terahertz detectors with different leakage currents to a...
We present broadband high sensitivity terahertz (THz) detectors based on 90 nm CMOS technology with ...
We report a sub-terahertz (THz) detector based on a 0.25-µm-gate-length AlGaN/GaN high-electron-mobi...
We fabricated in-house Field Effect Transistors detectors on GaN-heterostructures where we integrate...
We present results of investigations of Plasma Assisted Molecular Beam Epitaxy (PAMBE) - grown GaN/A...
The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave p...
A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detect...
<div id="articleAbsctract"> <p> An optimized micro-gated terahertz detector with novel triple res...
Detection of THz Radiation in "Bow-tie" Antenna-coupled GaN Field-effect Tranzistor
The rapidly expanding applications of THz-frequency radiation encourages the research of new materia...
We used AlGaN/GaN high electron mobility transistors as room-temperature direct detectors of radiati...
Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was ...
A 16-pixel terahertz (THz) receiver front-end working at room temperature was designed, built, and m...
AlGaN/GaN HEMTs [1,2] and nMOS [3] transistors are reported as the most sensitive field effect trans...