Atom Probe Tomography of Hard Nitride and Boride Thin Films

Hard ceramic thin films, including TiSiN, ZrAlN, ZrB2, and ZrTaB2, with applications for wear-resistant coatings, have been studied using atom probe tomography and correlated with several other analytical techniques, including X-ray diffraction, electron microscopy, and elastic recoil detection analysis. Outstanding obstacles for quantitative atom probe tomography of ceramic thin films have been surmounted. Mass spectral overlaps in TiSiN, which make 28Si indistinguishable from 14N, was resolved by isotopic substitution with 15N, and the nanostructural distribution of elements was thus revealed in 3-D, which enabled the identification of additional structural elements within the nanostructured Ti0.81Si0.1915N film. Improvements to the growth model of TiSiN by cathodic arc deposition was suggested. A self-organized nanolabyrinthine structure of ZrAlN, consisting of standing lamellae of fcc-ZrN and hexagonal AlN, was investigated with focus on the onset and limits of the self-organization. The local crystallographic orientational relationships were (001)ZrN || (0001)AlN and <110>ZrN || <2-1-10>AlN. Close to the MgO substrates, a smooth transition region was formed, going from segregated and disordered to the self-organized nanolabyrinthine structure. With increased growth temperature, coarse (111)-oriented ZrN grains occasionally precipitated and locally replaced the nanolabyrinthine structure. Significant local magnification effects rendered the Zr and N signals unusable, thereby inhibiting quantitative compositional analysis of the constituent phases, but the nanostructure was resolved using the Al signal. Ceramic materials are often affected by correlated evaporation, which can result in losses due to the detector dead-time/space. A compositional correction procedure was suggested, tested against an established procedure, and applied to ZrB2. The correction was found to be less dependent on the isotope abundances and background correction compared to the established procedure. While losses due to dead-time/space occur in atom probe tomography of all materials, the correlative field evaporation behavior of ceramics significantly increases the compositional error. The evaporation behavior of ZrB2 was therefore thoroughly investigated and evidence of preferential retention, correlated evaporation, and inhomogeneous field distributions at a low-index pole was presented. The high mass resolution, relatively low multiple events percentage, and quality of the co-evaporation correlation data was partly attributed to the crystal structure and film orientation, which promoted a layer-by-layer field evaporation. The evaporation behavior of the related ZrTaB2 films was found to be similar to that of ZrB2. The distribution of Ta in relation to Zr was investigated, showing that the column boundaries were both metal- and Ta-rich, and that there was a significant amount of Ta in solid solution within the columns. In addition, an instrumental artefact previously not described in atom probe tomography was found in several of the materials investigated in this thesis. The artefact consists of high-density lines along the analysis direction, which cannot be related to pole artefacts. The detection system of the atom probe was identified as the cause, because the artefact patterns on detector histograms coincided with the structure of the microchannel plate. Inconsistencies in the internal boundaries of the microchannel plate multifibers from the manufacturing process can influence the signal to the detector and locally increase the detection efficiency in a pattern characteristic to the microchannel plate in question. Altogether, this thesis shows that atom probe tomography of nitride and boride thin films is burdened by several artefacts and distortions, but that relevant material outcomes can nevertheless be achieved by informed choices of film isotopic constituents and analytical parameters, exclusion of heavily distorted regions (such as pole artefacts), and the use of compositional correction procedures when applicable