Monocrystalline alumina, known as sapphire, is one of the most commonly used ceramics in electronic devices. Understanding its wettability is thus of great importance for its engineering applications. In this work, the low-temperature wetting mechanisms of Sn–Ti active solder alloy on C-plane sapphire was comprehensively studied using the sessile drop method. The addition of 0.1 wt % Ti was found to effectively improve the wettability of Sn–Ti alloys, and the lowest contact angle on the sapphire substrate was achieved at 950 °C when Ti content was increased to 3 wt%. Thermal dynamics analysis and experimental results indicated that the isothermal spreading of Sn–3Ti alloy is controlled by the Ti adsorption in the vicinity of wetting triple ...
Contact angle measurements on silicon-nitride substrates were conducted on tin-based alloys, contain...
In this work, there are three research hypothesizes: First, the active element Ti only adsorbs at th...
When designing high-temperature brazing processes for ceramic materials, the interfacial phenomena b...
The wetting of Sn3Ag-based alloys on Al{sub 2}O{sub 3} has been studied using the sessile-drop confi...
To meet the packaging requirements of sapphire in special electronic components, there is an urgent ...
The purpose of this study was to investigate the wetting behavior and interfacial reactions of Sn-Ti...
The development of sapphire-based sensors for gas pressure application is growing in demand because ...
The interfacial reactions between two commercially available Ag–Cu–Ti-based active braze alloys and...
Sessile drop studies of molten aluminum on single-crystal sapphire substrates were conducted to inve...
Abstract: SnlOAg4Ti filler metal possesses the advantage of low thermal stress for active brazing of...
The wetting of Ni-Hf and Ni-Cr-Hf alloys on sapphire has been studied in this work. Sapphire represe...
The wetting of Ti-Cu alloys on Si3N4 was analyzed by the sessile drop method, using an imaging syste...
Wetting of Al and Ni substrate by Sn-Zn eutectic-based alloys with 0.5 (wt.%)of Ga and 0.2 (wt.%) of...
International audienceRecently, the ternary carbide Ti3SiC2 has gained much attention due to its uni...
Sapphire is a substrate of growing importance in semiconductor device manufacturing particularly in ...
Contact angle measurements on silicon-nitride substrates were conducted on tin-based alloys, contain...
In this work, there are three research hypothesizes: First, the active element Ti only adsorbs at th...
When designing high-temperature brazing processes for ceramic materials, the interfacial phenomena b...
The wetting of Sn3Ag-based alloys on Al{sub 2}O{sub 3} has been studied using the sessile-drop confi...
To meet the packaging requirements of sapphire in special electronic components, there is an urgent ...
The purpose of this study was to investigate the wetting behavior and interfacial reactions of Sn-Ti...
The development of sapphire-based sensors for gas pressure application is growing in demand because ...
The interfacial reactions between two commercially available Ag–Cu–Ti-based active braze alloys and...
Sessile drop studies of molten aluminum on single-crystal sapphire substrates were conducted to inve...
Abstract: SnlOAg4Ti filler metal possesses the advantage of low thermal stress for active brazing of...
The wetting of Ni-Hf and Ni-Cr-Hf alloys on sapphire has been studied in this work. Sapphire represe...
The wetting of Ti-Cu alloys on Si3N4 was analyzed by the sessile drop method, using an imaging syste...
Wetting of Al and Ni substrate by Sn-Zn eutectic-based alloys with 0.5 (wt.%)of Ga and 0.2 (wt.%) of...
International audienceRecently, the ternary carbide Ti3SiC2 has gained much attention due to its uni...
Sapphire is a substrate of growing importance in semiconductor device manufacturing particularly in ...
Contact angle measurements on silicon-nitride substrates were conducted on tin-based alloys, contain...
In this work, there are three research hypothesizes: First, the active element Ti only adsorbs at th...
When designing high-temperature brazing processes for ceramic materials, the interfacial phenomena b...