GaN-based electronic devices have great potential for future power applications, thanks to their wide band-gap, high breakdown electric field, and high electron mobility. In addition, these devices can be integrated on large-size Si substrates and enable novel monolithic power integrated circuits (ICs), providing an exceptional cost-effective GaN-on-Si platform to revolutionize current power conversion systems with much higher power density and greater energy efficiency. Despite all these remarkable advantages, the performance of current GaN-on-Si power devices is still far away from the prospect promised by this material, and further enhancement requires a signif-icant reduction in the ON-resistance of a unit area (RON·A) and an increase i...
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy...
In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-An...
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semico...
Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and ra...
We demonstrate high-performance GaN power metal-oxide-semiconductor high electron mobility transisto...
In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with ...
The rapidly-growing data throughput rates in a wide range of wirelesscommunication applications are ...
We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high br...
GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding prope...
We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semicondu...
Gallium nitride (GaN), a wide bandgap material, has grand success for high-brightness light-emitting...
Gallium nitride (GaN) possesses excellent physical properties, such as a high critical electric fiel...
High Electron Mobility Transistors (HEMTs) based on Gallium Nitride (GaN) and grown on Silicon (Si) ...
AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despi...
Gallium Nitride (GaN) is considered a very promising material for use in the field of power devices ...
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy...
In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-An...
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semico...
Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and ra...
We demonstrate high-performance GaN power metal-oxide-semiconductor high electron mobility transisto...
In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with ...
The rapidly-growing data throughput rates in a wide range of wirelesscommunication applications are ...
We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high br...
GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding prope...
We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semicondu...
Gallium nitride (GaN), a wide bandgap material, has grand success for high-brightness light-emitting...
Gallium nitride (GaN) possesses excellent physical properties, such as a high critical electric fiel...
High Electron Mobility Transistors (HEMTs) based on Gallium Nitride (GaN) and grown on Silicon (Si) ...
AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despi...
Gallium Nitride (GaN) is considered a very promising material for use in the field of power devices ...
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy...
In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-An...
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semico...