Realization of a Monolithic Multi-Terminal Si-Power Chip Integrating a 2-Phase Rectifier Composed of Vertical PIN Diodes Insulated by Vertical P+Walls

International audienceThis paper is within the context of mixed monolithic/hybrid integrationof a generic multi-phase power converter (DC/AC or AC/DC). The technological results provided in this paper deal with the realization of a 300m deep P+wallas well as with the realization ofthe monolithic 2-phase rectifier that consistsof four verticalPiN diodes that are separatedby P+walls.These technological results are currently in use for the realization of a three terminal common cathode chip consisting of two RC-IGBTs as well as a monolithic H-bridge converter that consists of four RC-IGBTs