International audienceIn this paper, programming operations are optimizedfor low energy consumption and short latency time applicationsin RRAM kb arrays. Origin of consumption (role of pulse’stime, programming current and voltage in SET and RESEToperations) is quantified on HfO$_2$ oxide based RRAMtechnology. Specific patterns are evaluated to reduce latencytime and energy consumption in memory devices. Innovativecircuit with $on\ the\ fly$ switching detection is proposed, allowingto reduce programming consumption down to single pJoperation in large memory arrays
In this paper, the physical mechanism and models of oxide-based resistive-switching random access me...
Recently an effective usage of the chip area plays an essential role for System-on-Chip (SOC) design...
In this work, a comprehensive analysis is performed to study the speed-power performance of one sele...
International audienceIn this paper, programming operations are optimizedfor low energy consumption ...
International audienceIn this paper, we investigate RRAM endurance improvement by optimizing program...
A crucial step in order to achieve fast and low-energy switching operations in resistive random acce...
Producción CientíficaA crucial step in order to achieve fast and low-energy switching operations in ...
There is currently a surge of interest in RRAM-based FPGAs because of their lower area, power loss r...
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consum...
Resistive random access memories (RRAMs) feature high-speed operations, low-power consumption, and n...
Based on the new finding on switching behavior, for the first time a new memory operation principle ...
session 2: Non-Volatile MemoriesInternational audienceIn this paper we present a high speed dynamica...
The role of pulse rise time during RRAM programming of cross-point arrays is investigated. The paras...
Memory has always been a building block element for information technology. Emerging technologies su...
Current state-of-the-art memory technologies such as FLASH, Static Random Access Memory (SRAM) and D...
In this paper, the physical mechanism and models of oxide-based resistive-switching random access me...
Recently an effective usage of the chip area plays an essential role for System-on-Chip (SOC) design...
In this work, a comprehensive analysis is performed to study the speed-power performance of one sele...
International audienceIn this paper, programming operations are optimizedfor low energy consumption ...
International audienceIn this paper, we investigate RRAM endurance improvement by optimizing program...
A crucial step in order to achieve fast and low-energy switching operations in resistive random acce...
Producción CientíficaA crucial step in order to achieve fast and low-energy switching operations in ...
There is currently a surge of interest in RRAM-based FPGAs because of their lower area, power loss r...
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consum...
Resistive random access memories (RRAMs) feature high-speed operations, low-power consumption, and n...
Based on the new finding on switching behavior, for the first time a new memory operation principle ...
session 2: Non-Volatile MemoriesInternational audienceIn this paper we present a high speed dynamica...
The role of pulse rise time during RRAM programming of cross-point arrays is investigated. The paras...
Memory has always been a building block element for information technology. Emerging technologies su...
Current state-of-the-art memory technologies such as FLASH, Static Random Access Memory (SRAM) and D...
In this paper, the physical mechanism and models of oxide-based resistive-switching random access me...
Recently an effective usage of the chip area plays an essential role for System-on-Chip (SOC) design...
In this work, a comprehensive analysis is performed to study the speed-power performance of one sele...