Extraction of Device S-Parameters within Board by using a TRL De-Embedding Technique

International audienceSemiconductor devices are tested within a complex environment including a loadboard and a socket. In this paper, we propose a calibration methodology and a RF de‐embedding technique that allows the extraction of the device parameters. This method is based on the utilization of several calibration elements inspired by the TRL method. This study has been applied on an active device and the results have been validated using a real test solution