An increasing degree of both semiconductor components miniaturization and electromagnetic contamination of the environment brings into question the reliability of modern electronic devices. This is particularly emphasized in the functioning conditions of electronic devices related to: nuclear power facilities, medical devices based on nuclear particle and x-ray radiation and the impulse power device. At the same time, non-resistance of semiconductor components to the effects of particle and electromagnetic radiation represents the basic limitation of the expected development of nanoelectronic components. Since the most commonly used material for manufacturing semiconductor components is monocrystalline silicon, it is of great significance t...
We have developed a full simulation code to evaluate the response of silicon strip detectors (SSDs) ...
The application of MOSFETs as detectors or device components in pulse power technique requires an in...
This thesis work presents the numerical device analysis of ionizing radiation induced single-event ...
An increasing degree of both semiconductor components miniaturization and electromagnetic contaminat...
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed...
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed...
International audienceA comprehensive approach is developed for the simulation of Single Particle Di...
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed...
An overview of the radiation damage induced problems connected with the application of silicon parti...
PSD10International audienceSilicon detectors have gained in popularity since silicon became a widely...
We investigate the issue of radiation-induced failures in electronic devices by developing a Monte C...
The characterization of the carriers' multiplication factor is a key issue for the design of robust ...
In future particle accelerators, silicon detectors will be exposed with large doses of different typ...
This paper deals with the analysis of correlation and regression between the parameters of partic...
A new one-dimensional device simulation package developed for the simulation of neutron radiation ef...
We have developed a full simulation code to evaluate the response of silicon strip detectors (SSDs) ...
The application of MOSFETs as detectors or device components in pulse power technique requires an in...
This thesis work presents the numerical device analysis of ionizing radiation induced single-event ...
An increasing degree of both semiconductor components miniaturization and electromagnetic contaminat...
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed...
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed...
International audienceA comprehensive approach is developed for the simulation of Single Particle Di...
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed...
An overview of the radiation damage induced problems connected with the application of silicon parti...
PSD10International audienceSilicon detectors have gained in popularity since silicon became a widely...
We investigate the issue of radiation-induced failures in electronic devices by developing a Monte C...
The characterization of the carriers' multiplication factor is a key issue for the design of robust ...
In future particle accelerators, silicon detectors will be exposed with large doses of different typ...
This paper deals with the analysis of correlation and regression between the parameters of partic...
A new one-dimensional device simulation package developed for the simulation of neutron radiation ef...
We have developed a full simulation code to evaluate the response of silicon strip detectors (SSDs) ...
The application of MOSFETs as detectors or device components in pulse power technique requires an in...
This thesis work presents the numerical device analysis of ionizing radiation induced single-event ...