In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters for protons in LT 1 0 0 GT , LT 1 1 0 GT and LT 1 1 1 GT Si crystal channels is investigated theoretically. The proton energy range considered is between I and 10 MeV. The original dechanneling functions are generated using a realistic Monte Carlo computer simulation code. We show that the Gompertz type dechanneling function, having two parameters, I-c and k, representing the dechanneling range and rate, respectively, approximate accurately the original dechanneling function. It is also shown that the energy dependences of parameters I-c and k can be approximated by a linear function and a sum of two exponential functions, respectively. The r...
In this article, the energy loss distributions of relativistic protons axially channeled in the bent...
Channeling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c protons ...
AbstractChanneling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c ...
In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters ...
In the present work, the dechanneling of protons in Si [110] is studied combining theoretical Monte-...
In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-...
Abstract. In the present work, the dechanneling of protons in Si [110] is studied combining theoreti...
In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytyp...
In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytyp...
A detailed study of the energy loss distributions of the relativistic protons axially channeled in t...
Energy spectra of protons channeling along the (0001) axis of several SiC polytype crystals (namely ...
We have observed the proton spectra from equal-velocity beams of H+, H2+, and H3+ incident on aligne...
Charged particles entering a crystal close to some preferred direction can be trapped in the electro...
In this article, the energy loss distributions of relativistic protons axially channeled in the bent...
Deflection of 400 GeV/c protons by a short bent silicon crystal was studied at the CERN SPS. It was ...
In this article, the energy loss distributions of relativistic protons axially channeled in the bent...
Channeling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c protons ...
AbstractChanneling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c ...
In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters ...
In the present work, the dechanneling of protons in Si [110] is studied combining theoretical Monte-...
In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-...
Abstract. In the present work, the dechanneling of protons in Si [110] is studied combining theoreti...
In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytyp...
In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytyp...
A detailed study of the energy loss distributions of the relativistic protons axially channeled in t...
Energy spectra of protons channeling along the (0001) axis of several SiC polytype crystals (namely ...
We have observed the proton spectra from equal-velocity beams of H+, H2+, and H3+ incident on aligne...
Charged particles entering a crystal close to some preferred direction can be trapped in the electro...
In this article, the energy loss distributions of relativistic protons axially channeled in the bent...
Deflection of 400 GeV/c protons by a short bent silicon crystal was studied at the CERN SPS. It was ...
In this article, the energy loss distributions of relativistic protons axially channeled in the bent...
Channeling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c protons ...
AbstractChanneling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c ...