Radiation effects in photodetectors (photodiodes) induced by various sources and fluences were studied in this paper. The influence of irradiation was determined by forward current-voltage (I-V) measurements of electrical characteristics. From I-V data, the ideality factor, saturation current, and series resistance were determined as a function of irradiation. Possible degradation of the electrical performance of photodetectors induced by irradiation was studied via ideality factor and its connection with the current transport mechanisms in these devices.4th Yugoslav-Materials-Research-Society Conference, Sep 10-14, 2001, Herceg Novi, Yugoslavi
The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid...
International audienceSeveral Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufac...
International audienceSeveral Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufac...
Radiation effects in photodetectors (photodiodes) induced by various sources and fluences were studi...
Radiation effects in photodetectors (photodiodes) induced by various sources and fluences were studi...
Degradation of electrical and optical characteristics of photodetectors in increased temperature con...
Degradation of electrical and optical characteristics of photodetectors in increased temperature con...
The radiation response of Si photo detectors has been studied through Current voltage (I-V) and Capa...
The effects of radiation on the structural and electrical properties of electronic devices are compl...
Due to its wide application areas, optoelectronicdevices are exposed, in their work enviroment, to d...
This article describes the electrical degradation in the I-V characteristics and the Current Transfe...
The influence of 100 MeV Silicon (Si) ion irradiation on electrical characteristics of Si photo dete...
Radiation damage of semiconductor components constitutes a safety risk for the functioning of circui...
Five kinds of the electronic circuit components were irradiated by Cof ° gamma rays with doses of 10...
The effect of irradiation with gamma rays, electrons or neutrons on the dc and low frequency ac elec...
The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid...
International audienceSeveral Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufac...
International audienceSeveral Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufac...
Radiation effects in photodetectors (photodiodes) induced by various sources and fluences were studi...
Radiation effects in photodetectors (photodiodes) induced by various sources and fluences were studi...
Degradation of electrical and optical characteristics of photodetectors in increased temperature con...
Degradation of electrical and optical characteristics of photodetectors in increased temperature con...
The radiation response of Si photo detectors has been studied through Current voltage (I-V) and Capa...
The effects of radiation on the structural and electrical properties of electronic devices are compl...
Due to its wide application areas, optoelectronicdevices are exposed, in their work enviroment, to d...
This article describes the electrical degradation in the I-V characteristics and the Current Transfe...
The influence of 100 MeV Silicon (Si) ion irradiation on electrical characteristics of Si photo dete...
Radiation damage of semiconductor components constitutes a safety risk for the functioning of circui...
Five kinds of the electronic circuit components were irradiated by Cof ° gamma rays with doses of 10...
The effect of irradiation with gamma rays, electrons or neutrons on the dc and low frequency ac elec...
The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid...
International audienceSeveral Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufac...
International audienceSeveral Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufac...