In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV N-14(2+) ion implantation in Fe-57(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Mossbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2x10(17) ions/cm(2). When heating these samples in vacuo up to 700degreesC, the iron-rich phases Eepsilon-Fe3N and gamma-Fe4N were produce...
Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was...
Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250...
The ion-induced intermixing of atoms between a thin metal film (Ni, Nb, Mo and Ti) and its silicon s...
In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied at...
This article reports on the formation of iron nitrides during nitrogen ion irradiation of Fe/Si bila...
Silicide formation and ion beam mixing of Fe/Si bilayers due to Ar-, Xe- and Au-ion irradiations at ...
The present study focuses on the changes in the structural and magnetic properties in Fe/Si bilayers...
MAGNETIC AND STRUCTURAL STUDIES OF FeSi MULTILAYERS IRRADIATED BY ARGON IONS. We prepared Fe/Si mult...
Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural p...
Iron silicides were produced by 100-keV 57Fe implantation at room temperature into Si(100), followed...
The compositional phases of ion beam synthesized Fe–Si structures at two high fluences (0.50 × 1017 ...
A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with nob...
[[abstract]]The formation of iron silicides on (111)Si and effects of ion implantation on phase tran...
A single phase polycrystalline β-FeSi2 layer has been synthesized at the near surface region by impl...
The commercial alloys of Fe-C-Si system (3,35-3,65 mass % C, 1,5-2,2 mass % Si, <1 mass % Mn, Cr, P,...
Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was...
Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250...
The ion-induced intermixing of atoms between a thin metal film (Ni, Nb, Mo and Ti) and its silicon s...
In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied at...
This article reports on the formation of iron nitrides during nitrogen ion irradiation of Fe/Si bila...
Silicide formation and ion beam mixing of Fe/Si bilayers due to Ar-, Xe- and Au-ion irradiations at ...
The present study focuses on the changes in the structural and magnetic properties in Fe/Si bilayers...
MAGNETIC AND STRUCTURAL STUDIES OF FeSi MULTILAYERS IRRADIATED BY ARGON IONS. We prepared Fe/Si mult...
Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural p...
Iron silicides were produced by 100-keV 57Fe implantation at room temperature into Si(100), followed...
The compositional phases of ion beam synthesized Fe–Si structures at two high fluences (0.50 × 1017 ...
A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with nob...
[[abstract]]The formation of iron silicides on (111)Si and effects of ion implantation on phase tran...
A single phase polycrystalline β-FeSi2 layer has been synthesized at the near surface region by impl...
The commercial alloys of Fe-C-Si system (3,35-3,65 mass % C, 1,5-2,2 mass % Si, <1 mass % Mn, Cr, P,...
Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was...
Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250...
The ion-induced intermixing of atoms between a thin metal film (Ni, Nb, Mo and Ti) and its silicon s...