Modelling of micro-Hall sensors for magnetization imaging

This paper presents a numerical model for the study of micro-Hall magnetometry applications, aiming at evaluating the sensitivity of semiconductor miniaturized devices to the stray field of permalloy nanostructures with ring and disk geometry. The procedure couples a micromagnetic code, for the calculation of the stray field generated by the nanomagnet, to a 2D classical transport model for the determination of the electric potential distribution inside the Hall plate. The model is applied to study the sensitivity of a micro-Hall device in the detection of magnetization switching processes characterized by vortex state, focusing on the influence of magnetic nanostructure position