In this paper we analyze the effect of the Bias Temperature Instability (BTI) aging phenomenon on the delay of deskew buffers employed in high performance microprocessors. Our analysis shows that, during circuit lifetime, the delay induced by BTI on each deskew buffer within the microprocessor can be significantly different, depending on how each deskew buffer is configured after fabrication (to compensate clock skews occurring during the fabrication process) and the operating temperature. Therefore, we show that even if deskew buffers compensate skews among clock signals after fabrication, their different level of degradation during circuit lifetime can generate significant skews between clock signals after only some month of circuit opera...
Aging mechanisms such as Bias Temperature Instability (BTI) and Channel Hot Carrier (CHC) are key li...
Synchronous clock distribution continues to be the dominant timing methodology for very large scale ...
Bias temperature instability (BTI) is recognised as the primary parametric failure mechanism in nano...
CMOS downsizing has posed a growing concern about circuit lifetime reliability. Bias Temperature Ins...
Technology scaling along with the process developments has resulted in performance improvement of th...
Negative bias temperature instability (NBTI) has emerged as a major concern not only to the function...
CMOS technology scaling allows the design of even more complex system but, at the same time, introdu...
This paper provides a comprehensive evaluation of the effects of Bias Temperature Instability (BTI) ...
NBTI (Negative Bias Temperature Instability) has emerged as the dominant PMOS device failure mechani...
Complementary Metallic Oxide Semiconductor (CMOS) technology scaling enhances the performance, trans...
Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) are two major causes for transist...
Reliability of electronic circuits has become one of the most prominent grand challenge in the near-...
In this paper, we address the issue of analyzing the effects of aging mechanisms on ICs' soft error ...
On-chip level shifters are the interface between parts of an Integrated Circuit (IC) that operate in...
The proposed paper addresses the overarching reliability issue of transistor aging in nanometer-scal...
Aging mechanisms such as Bias Temperature Instability (BTI) and Channel Hot Carrier (CHC) are key li...
Synchronous clock distribution continues to be the dominant timing methodology for very large scale ...
Bias temperature instability (BTI) is recognised as the primary parametric failure mechanism in nano...
CMOS downsizing has posed a growing concern about circuit lifetime reliability. Bias Temperature Ins...
Technology scaling along with the process developments has resulted in performance improvement of th...
Negative bias temperature instability (NBTI) has emerged as a major concern not only to the function...
CMOS technology scaling allows the design of even more complex system but, at the same time, introdu...
This paper provides a comprehensive evaluation of the effects of Bias Temperature Instability (BTI) ...
NBTI (Negative Bias Temperature Instability) has emerged as the dominant PMOS device failure mechani...
Complementary Metallic Oxide Semiconductor (CMOS) technology scaling enhances the performance, trans...
Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) are two major causes for transist...
Reliability of electronic circuits has become one of the most prominent grand challenge in the near-...
In this paper, we address the issue of analyzing the effects of aging mechanisms on ICs' soft error ...
On-chip level shifters are the interface between parts of an Integrated Circuit (IC) that operate in...
The proposed paper addresses the overarching reliability issue of transistor aging in nanometer-scal...
Aging mechanisms such as Bias Temperature Instability (BTI) and Channel Hot Carrier (CHC) are key li...
Synchronous clock distribution continues to be the dominant timing methodology for very large scale ...
Bias temperature instability (BTI) is recognised as the primary parametric failure mechanism in nano...