Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools
- BETTI BENEVENTI, GIOVANNI
- REGGIANI, SUSANNA
- GNUDI, ANTONIO
- GNANI, ELENA
- BACCARANI, GIORGIO
- Aliane, Alireza
- Collaert, Nadine
- Mocuta, Anda
- Thean, Aaron
Publication date
January 2015
DOI Publisher
Institute of Electrical and Electronics Engineers Inc. Citation count (estimate)
2Abstract
A simple analytical model of thin-body In0.53Ga0.47As-on-InP MOSFET low-field electron mobility suitable for integration in Technology-CAD (TCAD) tools is presented. Phonon, Coulomb and surface roughness scattering are accounted for. In order to characterize the phonon scattering contribution, an expression for the device effective thickness is derived from 1-D Schroedinger-Poisson simulations. The model is validated through comparison with experimental CG-Vgs and Id-Vgs curves collected on transistors with body thicknesses down to 5 nm
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