none5In this contribution the field emission by tunneling of electrons of 3C-SiC nanowires on Si substrate, grown by CVD method via Ni catalyst, has been investigated. Scanning electron images have quantified the low density of the nanowires over the sample surface. In order to exclude any contribution to the Field Emission phenomenon from the Si substrate, the field emission measurements have been performed before and after removing the SiC nanowires. The Field Emission experiments have been carried out in dark conditions and by shining the sample surface. The extracted Fowler-Nordheim (F-N) plots show that the Field Emission from nanowires is highly sensitive to illumination parameters. When using lighting, a partition in three regions of...
In light of the recent publication of a report on the preparation of crystalline silicon carbide nan...
[[abstract]]Highly porous, individually separated, and vertically aligned rough silicon rods (r-SiRs...
We report the low-pressure chemical vapor deposition growth and field emission characterization of ...
In this contribution the field emission by tunneling of electrons of 3C-SiC nanowires on Si substrat...
We report here field-emission (FE) studies of individual single-crystal SiC nanowires that showed se...
This paper explores the cold field emission (CFE) properties of SiC nanowire (NW) arrays. The CFE cu...
Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted che...
Silicon carbide (SiC) nanowires were grown directly on Si substrates by thermal evaporation of WO3 a...
Ce travail s’inscrit dans le cadre de la caractérisation physique de nanofils (NF) semiconducteurs (...
Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 ...
Nanowires (NWs) open promising near-future perspectives for the design and fabrication of nano-scale...
We use field emission (FE) from individual silicon carbide nanowires (NWs) to explore their potentia...
In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC ...
Well-aligned SiC nanowire arrays are successfully synthesized on carbon cloth by a facile chemical v...
Tapered silicon carbide (SiC) nanowires were directly grown on the surface of flexible carbon fabric...
In light of the recent publication of a report on the preparation of crystalline silicon carbide nan...
[[abstract]]Highly porous, individually separated, and vertically aligned rough silicon rods (r-SiRs...
We report the low-pressure chemical vapor deposition growth and field emission characterization of ...
In this contribution the field emission by tunneling of electrons of 3C-SiC nanowires on Si substrat...
We report here field-emission (FE) studies of individual single-crystal SiC nanowires that showed se...
This paper explores the cold field emission (CFE) properties of SiC nanowire (NW) arrays. The CFE cu...
Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted che...
Silicon carbide (SiC) nanowires were grown directly on Si substrates by thermal evaporation of WO3 a...
Ce travail s’inscrit dans le cadre de la caractérisation physique de nanofils (NF) semiconducteurs (...
Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 ...
Nanowires (NWs) open promising near-future perspectives for the design and fabrication of nano-scale...
We use field emission (FE) from individual silicon carbide nanowires (NWs) to explore their potentia...
In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC ...
Well-aligned SiC nanowire arrays are successfully synthesized on carbon cloth by a facile chemical v...
Tapered silicon carbide (SiC) nanowires were directly grown on the surface of flexible carbon fabric...
In light of the recent publication of a report on the preparation of crystalline silicon carbide nan...
[[abstract]]Highly porous, individually separated, and vertically aligned rough silicon rods (r-SiRs...
We report the low-pressure chemical vapor deposition growth and field emission characterization of ...