An analytical theory of electrical bistability in amorphous semiconductors is presented, based on some very general and essential assumptions and few equations of simple and clear physical meaning. The theory has been validated by comparisons with experimental transport data in chalcogenide materials and provides predictive analytical expressions for field and current values at the switching point
Electric conductivity and electron transport mechanisms in amorphous semiconductor
The low-field electric conduction in amorphous chalcogenides is here investigated by means of a Mont...
Although the theory of Schottky barrier in amorphous semiconductors is generally accepted, the limit...
An analytical theory of electrical bistability in amorphous semiconductors is presented, based on so...
An analytical theory of electrical bistability in amorphous semiconductors is presented and validate...
A time-dependent trap-limited conduction scheme is used to analyze the transient behavior of bistabl...
A time-dependent trap-limited conduction scheme is used to analyze the transient behavior of bistabl...
A simple theory of electrical conductivity of a-As2Se3 and similar amorphous semiconductor has been ...
The role of the extended (band) states in determining the electric switching of chalcogenide materia...
The theory of transport in disordered systems is approached using the Master equation point of view....
Chalcogenide materials are receiving increasing interest for their many applications as active mate...
The I(V) characteristics of amorphous chalcogenides usually show a negative differential conductance...
In the present paper, we discuss a generalized theory of electrical characteristics for amorphous se...
Chalcogenide materials have received great attention in the last decade owing to their application i...
A number of analytical theories related to disordered systems have been developed based on two major...
Electric conductivity and electron transport mechanisms in amorphous semiconductor
The low-field electric conduction in amorphous chalcogenides is here investigated by means of a Mont...
Although the theory of Schottky barrier in amorphous semiconductors is generally accepted, the limit...
An analytical theory of electrical bistability in amorphous semiconductors is presented, based on so...
An analytical theory of electrical bistability in amorphous semiconductors is presented and validate...
A time-dependent trap-limited conduction scheme is used to analyze the transient behavior of bistabl...
A time-dependent trap-limited conduction scheme is used to analyze the transient behavior of bistabl...
A simple theory of electrical conductivity of a-As2Se3 and similar amorphous semiconductor has been ...
The role of the extended (band) states in determining the electric switching of chalcogenide materia...
The theory of transport in disordered systems is approached using the Master equation point of view....
Chalcogenide materials are receiving increasing interest for their many applications as active mate...
The I(V) characteristics of amorphous chalcogenides usually show a negative differential conductance...
In the present paper, we discuss a generalized theory of electrical characteristics for amorphous se...
Chalcogenide materials have received great attention in the last decade owing to their application i...
A number of analytical theories related to disordered systems have been developed based on two major...
Electric conductivity and electron transport mechanisms in amorphous semiconductor
The low-field electric conduction in amorphous chalcogenides is here investigated by means of a Mont...
Although the theory of Schottky barrier in amorphous semiconductors is generally accepted, the limit...