none5siHere, we report on significant material information provided by semi-contact phase-images in a wide range of hard III-nitride surfaces. We show that the phase contrast, which is fundamentally related to the energy dissipation during tip–surface interaction, is sensitive to the crystalline nature of the material and thus could potentially be used to determine the crystalline quality of thin nitride layers. Besides, we found that the structural defects, especially threading dislocations and cracks, act as selective sites where energy mainly dissipates. Consequently, in nitrides defects with very low dimensions can actually be imaged with phase-contrast imaging.mixedA. Minj; D. Cavalcoli; A. Cavallini; P. Gamarra; M.A. di Forte PoissonA...
A new method has been developed to determine the misfit of disc-shaped precipitates in a matrix usin...
The article of record as published may be found at https://doi.org/10.1017/S1431927618010346Group II...
The thin intergranular phase in a silicon nitride (Si3N4) ceramic, which has been regarded for deca...
Here, we report on significant material information provided by semi-contact phase-images in a wide ...
none6noMOCVD grown Al1-xInxN/AlN/GaN and InxGa1-xN/GaN heterostructures have been characterized by A...
Heteroepitaxially-grown nitride semiconductors typically contain a high density of extended defects,...
MOCVD grown Al1-xInxN/AlN/GaN heterostructures have been characterized by atomic force microscopy( A...
We describe the use of electron channelling contrast imaging (ECCI) – in a field emission scanning e...
The effects of compressive cold deformation under the quasi-static loads on the nitride formation, n...
Scanning Kelvin probe microscopy (SKPM) and conductive atomic force microscopy (C-AFM) have been use...
This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown ...
The thin intergranular phase in a silicon nitride (Si3N4)ceramic, which has been regarded for decade...
Electrical and structural properties of extended defects including threading dislocations/V-defects ...
Research on III-nitride semiconductors is achieving new heights due their high potential application...
A new method has been developed to determine the misfit of disc-shaped precipitates in a matrix usin...
A new method has been developed to determine the misfit of disc-shaped precipitates in a matrix usin...
The article of record as published may be found at https://doi.org/10.1017/S1431927618010346Group II...
The thin intergranular phase in a silicon nitride (Si3N4) ceramic, which has been regarded for deca...
Here, we report on significant material information provided by semi-contact phase-images in a wide ...
none6noMOCVD grown Al1-xInxN/AlN/GaN and InxGa1-xN/GaN heterostructures have been characterized by A...
Heteroepitaxially-grown nitride semiconductors typically contain a high density of extended defects,...
MOCVD grown Al1-xInxN/AlN/GaN heterostructures have been characterized by atomic force microscopy( A...
We describe the use of electron channelling contrast imaging (ECCI) – in a field emission scanning e...
The effects of compressive cold deformation under the quasi-static loads on the nitride formation, n...
Scanning Kelvin probe microscopy (SKPM) and conductive atomic force microscopy (C-AFM) have been use...
This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown ...
The thin intergranular phase in a silicon nitride (Si3N4)ceramic, which has been regarded for decade...
Electrical and structural properties of extended defects including threading dislocations/V-defects ...
Research on III-nitride semiconductors is achieving new heights due their high potential application...
A new method has been developed to determine the misfit of disc-shaped precipitates in a matrix usin...
A new method has been developed to determine the misfit of disc-shaped precipitates in a matrix usin...
The article of record as published may be found at https://doi.org/10.1017/S1431927618010346Group II...
The thin intergranular phase in a silicon nitride (Si3N4) ceramic, which has been regarded for deca...