none7siWe report N-K–edge x-ray absorption near-edge spectra of a set of InxGa1−xN alloy epilayers with 0.36 < x < 0.87, including linear dichroism effects. Careful experimental and data treatment procedures lead to consistent variations of spectral features with In concentration and sample orientation with respect to the direction of linear polarization of the x-ray beam. Insight into the origin of spectral features is provided by a combination of ab initio simulations of the equilibrium structure and atom-by-atom spectral simulations. The relation between the spectral lineshape and the variations in the composition of the first coordination shell and the corresponding local structural distortions is discussed.mixedL. Amidani; F. Fil...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
Postgrowth hydrogen incorporation in In-rich InxGa1−xN (x>0.4) alloys strongly modifies the optical ...
Nitrogen and aluminum near K-edge absorption measurements of wurtzite AlN, GaN and InN, and their te...
We report N-K-edge x-ray absorption near-edge spectra of a set of In(x)Ga(1-x)N alloy epilayers with...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
Dilute nitrides, in particular InxGa1-xAs1-yNy are very interesting alloys because of their actual a...
The electronic structure of InGaN epitaxial layers grown on sapphire substrates was studied using X-...
Post-growth hydrogen incorporation in In-rich InxGa1-xN (x>0.4) alloys strongly modifies the optical...
Optical absorption spectroscopy has been applied to study properties such as the fundamental absorpt...
none2We describe the use of X-ray absorption spectroscopy (XAS) with synchrotron radiation to study ...
Polarized measurements of oriented single crystals can be used to simplify the interpretation of X-r...
The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich InxGa1−x...
We investigated atomic ordering in In-rich InxGa1−xN epilayers in order to obtain an understanding...
Postgrowth hydrogen incorporation in In-rich InxGa1 12xN (x>0.4) alloys strongly modifies the optica...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
Postgrowth hydrogen incorporation in In-rich InxGa1−xN (x>0.4) alloys strongly modifies the optical ...
Nitrogen and aluminum near K-edge absorption measurements of wurtzite AlN, GaN and InN, and their te...
We report N-K-edge x-ray absorption near-edge spectra of a set of In(x)Ga(1-x)N alloy epilayers with...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
Dilute nitrides, in particular InxGa1-xAs1-yNy are very interesting alloys because of their actual a...
The electronic structure of InGaN epitaxial layers grown on sapphire substrates was studied using X-...
Post-growth hydrogen incorporation in In-rich InxGa1-xN (x>0.4) alloys strongly modifies the optical...
Optical absorption spectroscopy has been applied to study properties such as the fundamental absorpt...
none2We describe the use of X-ray absorption spectroscopy (XAS) with synchrotron radiation to study ...
Polarized measurements of oriented single crystals can be used to simplify the interpretation of X-r...
The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich InxGa1−x...
We investigated atomic ordering in In-rich InxGa1−xN epilayers in order to obtain an understanding...
Postgrowth hydrogen incorporation in In-rich InxGa1 12xN (x>0.4) alloys strongly modifies the optica...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
Postgrowth hydrogen incorporation in In-rich InxGa1−xN (x>0.4) alloys strongly modifies the optical ...
Nitrogen and aluminum near K-edge absorption measurements of wurtzite AlN, GaN and InN, and their te...