We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched MnAs coordination, we have found the presence of Mn in a MnAu intermetallic compound
InAs nanowires have been grown by molecular beam epitaxy using Mn as growth catalyst. Nanowires NWs...
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001...
The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades,...
We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has bee...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degre...
none8In order to determine the local structure of Mn in delta-doped GaAs layers we have carried out ...
The location of Mn atoms in the MBE-grown layers of Ga1-xMnxAs is correlated with all important phys...
A significant amount of scientific activity is devoted to studies of Mn containing semiconductors. I...
We report on the growth of microns long Mn-catalyzed GaAs nanowires. alpha-Mn is found on top of the...
none1Experiment approved by the international experiment review panel of the European Synchrotron Ra...
A significant amount of scientific activity is devoted to studies of Mn containing semiconductors. I...
We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular ...
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial g...
InAs nanowires have been grown by molecular beam epitaxy using Mn as growth catalyst. Nanowires NWs...
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001...
The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades,...
We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has bee...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth ...
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degre...
none8In order to determine the local structure of Mn in delta-doped GaAs layers we have carried out ...
The location of Mn atoms in the MBE-grown layers of Ga1-xMnxAs is correlated with all important phys...
A significant amount of scientific activity is devoted to studies of Mn containing semiconductors. I...
We report on the growth of microns long Mn-catalyzed GaAs nanowires. alpha-Mn is found on top of the...
none1Experiment approved by the international experiment review panel of the European Synchrotron Ra...
A significant amount of scientific activity is devoted to studies of Mn containing semiconductors. I...
We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular ...
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial g...
InAs nanowires have been grown by molecular beam epitaxy using Mn as growth catalyst. Nanowires NWs...
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001...
The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades,...