Effect of hydrogen irradiation on the valence band structure of dilute nitride semiconductor allo

H irradiation is a tool which can be used to tune the optical properties of "dilute nitride" semiconductor alloys. This effect is due to the formation of N-H complexes. We propose to measure XES spectra at the N K edge in GaAsN to determine the changes in the local VB DOS induced by H irradiation. This will allow to gain unavailable insight on this intriguing physical phenomenon