none5noneNava F.; Castaldini A.; Cavallini A.; Errani P.; Cindro V.;Nava F.; Castaldini A.; Cavallini A.; Errani P.; Cindro V.
In 2016, the ”E-SiCure” project (standing for Engineering Silicon Carbide for Border and Port Securi...
This dataset contains capacitance-voltage measurements used for calculation of concentrations of EH1...
The results of recent IBIC and DLTS studies of radation damage in silicon carbide (SiC) diodes will ...
We report the results of an experimental study on the radiation hardness of 4H-SiC diodes used as al...
In this work we report electrical characterizations on heavily irradiated epitaxial H-4-SiC Schottky...
In this work we report electrical characterizations on heavily irradiated epitaxial 4H-SiC Schottky ...
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of...
We report on response of newly designed 4H-SiC Schottky barrier diode (SBD) detector to alpha, beta ...
Ni/4H-SiC Schottky diode n-tipa ozračene su termalnim i brzim neutronima te implantirane s 2MeV He i...
Abstract Large area 4H-SiC Schottky diodes equipped with a 6LiF converter were tested as neutron d...
SiC is a wide-gap material with excellent electrical and physical properties that may make it an imp...
Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it espec...
Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Jun...
We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H...
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiati...
In 2016, the ”E-SiCure” project (standing for Engineering Silicon Carbide for Border and Port Securi...
This dataset contains capacitance-voltage measurements used for calculation of concentrations of EH1...
The results of recent IBIC and DLTS studies of radation damage in silicon carbide (SiC) diodes will ...
We report the results of an experimental study on the radiation hardness of 4H-SiC diodes used as al...
In this work we report electrical characterizations on heavily irradiated epitaxial H-4-SiC Schottky...
In this work we report electrical characterizations on heavily irradiated epitaxial 4H-SiC Schottky ...
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of...
We report on response of newly designed 4H-SiC Schottky barrier diode (SBD) detector to alpha, beta ...
Ni/4H-SiC Schottky diode n-tipa ozračene su termalnim i brzim neutronima te implantirane s 2MeV He i...
Abstract Large area 4H-SiC Schottky diodes equipped with a 6LiF converter were tested as neutron d...
SiC is a wide-gap material with excellent electrical and physical properties that may make it an imp...
Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it espec...
Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Jun...
We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H...
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiati...
In 2016, the ”E-SiCure” project (standing for Engineering Silicon Carbide for Border and Port Securi...
This dataset contains capacitance-voltage measurements used for calculation of concentrations of EH1...
The results of recent IBIC and DLTS studies of radation damage in silicon carbide (SiC) diodes will ...
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