Add to ORKGA mathematical model to describe the growth of silicides layers in metal - silicon diffusion couples and to calculate the diffusion coefficients and the interdiffusion coefficients is presented
In this work the integrated diffusion coeff., Dint is used to get a kinetic description of the growt...
In this work, the integrated diffusion coefficient, D'-int' is used to describe the growth kinetics ...
Multiphase diffusion studies were carried out at selected temperatures between 900$\sp\circ$-1700$\s...
A mathematical model to describe the growth of silicides layers in metal - silicon diffusion couples...
An original kinetic model to calculate the diffusion coefficients of the metals in silicides layers ...
The growth of Transition Metal Silicides in Metal-Silicon Diffusion Couples is followed by scanning ...
The growth of Transition Metal Silicides in Metal-Silicon Diffusion Couples is followed by scanning ...
The reactive growth of silicides in M (Nb, Ta, V) - Si bulk diffusion couples as observed by Scanni...
The growth of vanadium and tantalum silicides layers in the metal - Si bulk diffusion couples is fol...
The growth of vanadium and tantalum silicides layers in the metal - Si bulk diffusion couples is fol...
The growth of vanadium silicides in V-Si diffusion couples is followed by scanning electron microsco...
The growth of vanadium silicides in V-Si diffusion couples is followed by scanning electron microsco...
Bibliography: pages 210-215.A theory for the growth kinetics of planar silicide formation in single-...
In this work the integrated diffusion coeff., Dint is used to get a kinetic description of the growt...
In this work the integrated diffusion coeff., Dint is used to get a kinetic description of the growt...
In this work the integrated diffusion coeff., Dint is used to get a kinetic description of the growt...
In this work, the integrated diffusion coefficient, D'-int' is used to describe the growth kinetics ...
Multiphase diffusion studies were carried out at selected temperatures between 900$\sp\circ$-1700$\s...
A mathematical model to describe the growth of silicides layers in metal - silicon diffusion couples...
An original kinetic model to calculate the diffusion coefficients of the metals in silicides layers ...
The growth of Transition Metal Silicides in Metal-Silicon Diffusion Couples is followed by scanning ...
The growth of Transition Metal Silicides in Metal-Silicon Diffusion Couples is followed by scanning ...
The reactive growth of silicides in M (Nb, Ta, V) - Si bulk diffusion couples as observed by Scanni...
The growth of vanadium and tantalum silicides layers in the metal - Si bulk diffusion couples is fol...
The growth of vanadium and tantalum silicides layers in the metal - Si bulk diffusion couples is fol...
The growth of vanadium silicides in V-Si diffusion couples is followed by scanning electron microsco...
The growth of vanadium silicides in V-Si diffusion couples is followed by scanning electron microsco...
Bibliography: pages 210-215.A theory for the growth kinetics of planar silicide formation in single-...
In this work the integrated diffusion coeff., Dint is used to get a kinetic description of the growt...
In this work the integrated diffusion coeff., Dint is used to get a kinetic description of the growt...
In this work the integrated diffusion coeff., Dint is used to get a kinetic description of the growt...
In this work, the integrated diffusion coefficient, D'-int' is used to describe the growth kinetics ...
Multiphase diffusion studies were carried out at selected temperatures between 900$\sp\circ$-1700$\s...